Abstract
Mo x Si y /Si multilayers with a period thickness of ∼7.5 nm and bilayers Mo x Si y /Si have been fabricated by e−-beam evaporation in UHV at a deposition temperature of 150°C [1]. The composition of the as-deposited layer systems and changes in the composition after baking the samples have been studied with high-resolution RBS. For a multilayer with a mixing ratioy/x≃2, no interdiffusion is observed up to a baking temperature of 830°C. For samples with a mixing ratioy/x≃1, diffusion is observed up to a baking temperature of 630°C, resulting in a mixing ratio close toy/x≃2. This mixing ratio remains almost stable up to ∼830°C, and considerable interdiffusion is only observed in those systems where regions with a mixing ratio smaller than 2 still exist. Possible reasons for the high thermal stability of the samples are the lack of a concentration gradient for Si in the system \(Si/Mo_{0.\bar 3} Si_{0.\bar 6}\) and/or the crystallization of MoSi2.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Stock, H.-J., Kleineberg, U., Kloidt, A., Schmiedeskamp, B., Heinzmann, U., Krumrey, M., Müller, P., Scholze, F.: Appl Phys. Lett.63, 2207 (1993)
Kloidt, A., Nolting, K., Kleineberg, U., Schmiedeskamp, B., Heinzmann, U., Müller, P., Kühne, M.: Appl. Phys. Lett.58, 2601 (1991).
Trail, J.A., Byer, R.L., Barbee, T.W.: Appl. Phys. Lett.52, 269 (1988)
Niibe, M., Hayashida, M., Iizuka, T., Miyake, A., Watanabe, Y., Takahashi, R., Fukuda, Y.: Proc. SPIE1343, 2 (1990)
Stearns, D.G., Rosen, R.S., Vernon, S.P.: J. Vac. Sci. Technol. A9, 2662 (1991)
Slaughter, J.M., Kearney, P.A., Schulze, D.W., Falco, C.M., Hills, C.R., Saloman, E.B., Watts, R.N.: Proc. SPIE1343, 73 (1990)
Boher, P., Houdy, Ph., Hennet, L., Kühne, M., Müller, P., Frontier, J.P., Trouslard, P., Senillou, C., Joud, J.C., Ruterana, P.: Proc. SPIE1547, 41 (1991)
Rosen, R.S., Viliardos, M.A., Kassner, M.E., Stearns, D.G., Vernon, S.P.: Proc. SPIE1547, 212 (1991)
Schmiedeskamp, B., Kloidt, A., Stock, H.-J., Kleineberg, U., Döhring, T., Pröpper, M., Rahn, S., Hilgers, K., Heidemann, B., Tappe, T., Heinzmann, U., Krumrey, M., Müller, P., Scholze, F., Heidemann, K.F.: Opt. Eng.33, 1314 (1994)
Stock, H.-J., Kleineberg, U., Heidemann, B., Hilgers, K., Kloidt, A., Schmiedeskamp, B., Heinzmann, U., Krumrey, M., Müller, P., Scholze, F.: Appl. Phys. A58, 371 (1994)
Stearns, D.G., Stearns, M.B., Cheng, Y., Stith, J.H., Ceglio, N.M.: J. Appl. Phys.67, 2415 (1990)
Kondratenko, V.V., Pershin, Yu.P., Poltseva, O.V., Fedorenko, A.I., Zubarev, E.N., Yulin, S.A., Kozhevnikov, I.V., Sagitov S.I., Chirkov, V.A., Levashov, V.E., Vinogradov, A.V.: Appl. Opt.32, 1811 (1993)
Holloway, K., Do, K.B., Sinclair, R.: J. Appl. Phys.65, 474 (1989)
Heidemann, B., Tappe, T., Schmiedeskamp, B., Heinzmann, U.: Appl. Surf. Sci.78, 133 (1994)
Kleineberg U., Stock, H.-J., Kloidt, A., Schmiedeskamp, B., Heinzmann, U., Hopfe, S., Scholz, R.: Phys. Stat. Sol.A145, 539 (1994)
Schmiedeskamp, B., Heidemann, B., Kleineberg, U., Kloidt, A., Kühne, M., Müller, H., Müller, P., Nolting, K., Heinzmann, U.: Proc. SPIE1343, 64 (1990)
Heidemann, B., Tappe, T., Schmiedeskamp, B., Heinzmann, U.: Thin Solid Films228, 60 (1993)
In no case a dependence of the backscattering intensity on the angle of incidence due to the channeling effect has been found in the layer systems studied in this work
Chu, W.-K., Mayer, J.W., Nicolet, M.-A.: Backscattering Spectrometry. New York: Academic Press 1978
Ziegler, J.F.: Helium Stopping Powers and Ranges in All Elements. Vol. 4 of The Stopping and Ranges of Ions in Matter. New York: Pergamon Press 1977
This fraction has been measured with a semiconductor detector by use of deflection plates
The quantity measured by RBS is the amount of atoms per cm2 in a single layer of a given layer system. The amount of atoms/cm2 has been converted into a thickness value by using an atomic concentration of 6.5×1022 atoms/cm3 for mixed layers
Petford-Long, A.K., Stearns, M.B., Chang, C.-H., Nutt, S.R., Stearns, D.G., Ceglio, N.M., Hawryluk, A.M.: J. Appl. Phys.61, 1422 (1987)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Heidemann, B., Tappe, T., Schmiedeskamp, B. et al. Thermal stability and diffusion processes in Mo x Si y /Si multilayers studied with high-resolution RBS. Z. Phys. B - Condensed Matter 99, 37–42 (1995). https://doi.org/10.1007/s002570050007
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s002570050007