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Effect of temperature of a vertical parallel silicon solar cell under photo-thermal conditions

Heat and Mass Transfer volume 55, pages 1207–1214 (2019)Cite this article

Abstract

This paper aims presenting the study of the photo-thermal and behavior of the space charge region for an n + −p vertical parallel junction silicon solar cell under monochromatic illumination. It also deals with mathematical relation related to the use of new approach that involves parameter of the solar cell. The study of the base for an illumination by the rear face allowed us to determine the density of the minority carriers, the photocurrent, the photovoltage. Nyquist and Bode’s representation of recombination velocity, angular frequency and impedance allowed us to give their equivalent circuits. Also we studied the thermal behavior of the solar cell through the temperature which is a very important parameter in the operation of the solar cell. We study the influence of the pulsation on the variation of the temperature and the density of heat flux.

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Authors and Affiliations

  1. Electric and Electronic Engineering Department, IĞDIR University, 76000, Iğdır, Turkey

    Gökhan Sahin

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  1. Gökhan Sahin
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Correspondence to Gökhan Sahin.

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Sahin, G. Effect of temperature of a vertical parallel silicon solar cell under photo-thermal conditions. Heat Mass Transfer 55, 1207–1214 (2019). https://doi.org/10.1007/s00231-018-2488-y

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  • DOI: https://doi.org/10.1007/s00231-018-2488-y

Keywords

  • Photovoltaic
  • Temperature
  • Heat-flux
  • Nyquist and bode diagram
  • Electrical parameter
  • Equivalent electric circuit