Abstract
The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.
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Received: 27 December 2000 / Revised: 20 February 2001 / Accepted: 26 February 2001
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Wiedemann, B., Meyer, J., Jockel, D. et al. Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals. Fresenius J Anal Chem 370, 541–543 (2001). https://doi.org/10.1007/s002160100800
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DOI: https://doi.org/10.1007/s002160100800