Spark source mass spectrometric assessment of boron and nitrogen concentrations in crystalline gallium arsenide

Abstract

The residual or doped element concentration [E] in GaAs measured by SSMS is only accurate with respect to the relative sensitivity coefficient RSC_E. For a trace element concentration, the RSC_E = [E]_SSMS/[E]_TRUE is set to unity, if no reference material or method is available to approximate the concentration to the true value. For boron a relative sensitivity coefficient of RSC_B = 0.94 ± 0.08 was obtained using TI-IDMS as a reference method. RSC_N = 1 is used for nitrogen determinations. A boron and nitrogen detection limit of 4.4 × 10¹³ cm^–3 is achieved. SSMS was used as reference method to calibrate the FTIR factor f_E = [E] / I_α due to the integrated local vibrational mode absorption I_α of atomic boron and nitrogen in GaAs. A factor of f_B = (12.0 × 2.7) × 10¹⁶ cm^–1 (517 cm^–1) and f_N = (7.4 ± 0.1) × 10¹⁵ cm^–1 (472 cm^–1) was obtained for a boron and nine nitrogen containing GaAs samples at 77 K and 10 K, respectively.