Abstract
TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 1010 atoms · cm–2. The all-over cleanliness can be analyzed using VPD/TXRF. For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.105 atoms · cm–2.
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Received: 8 January 1998 / Revised: 13 July 1998 / Accepted: 30 July 1998
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Fabry, L., Pahlke, S., Kotz, L. et al. Novel methods of TXRF analysis for silicon wafer surface inspection. Fresenius J Anal Chem 363, 98–102 (1999). https://doi.org/10.1007/s002160051145
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DOI: https://doi.org/10.1007/s002160051145