Abstract
The Au/Si system exhibits an extremely low eutectic temperature of 363° C. Thin gold films of 200 nm thickness were deposited on Si(111) single-crystals and the electrical and optical properties of the melting mixtures were investigated. The resistivity measurements were performed in situ in a combined LEED/Auger apparatus. A highly resolving spectroscopic ellipsometer was used for the optical analysis in the wavelength range 400–900 nm. The eutectic temperature was found to be lower than for bulk Au/Si samples. The structure analysis showed that small liquid Au/Si islands embedded in the silicon surface are formed by the melting process. Various heating/ cooling cycles show a characteristic hysteresis behaviour.
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Received: 24 June 1996 / Accepted: 3 November 1996
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Brüggemann, M., Mümmler, K. & Wissmann, P. Electrical and optical properties of melting Au/Si eutectics on Si(111). Fresenius J Anal Chem 358, 179–181 (1997). https://doi.org/10.1007/s002160050377
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DOI: https://doi.org/10.1007/s002160050377