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Recent developments and challenges in resistance-based hydrogen gas sensors based on metal oxide semiconductors

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Abstract

In recent years, the energy crisis has made the world realize the importance and need for green energy. Hydrogen safety has always been a primary issue that needs to be addressed for the application and large-scale commercialization of hydrogen energy, and precise and rapid hydrogen gas sensing technology and equipment are important prerequisites for ensuring hydrogen safety. Based on metal oxide semiconductors (MOS), resistive hydrogen gas sensors (HGS) offer advantages, such as low cost, low power consumption, and high sensitivity. They are also easy to test, integrate, and suitable for detecting low concentrations of hydrogen gas in ambient air. Therefore, they are considered one of the most promising HGS. This article provides a comprehensive review of the surface reaction mechanisms and recent research progress in optimizing the gas sensing performance of MOS-based resistive hydrogen gas sensors (MOS-R-HGS). Particularly, the advancements in metal-assisted or doped MOS, mixed metal oxide (MO)-MOS composites, MOS-carbon composites, and metal-organic framework-derived (MOF)-MOS composites are extensively summarized. Finally, the future research directions and possibilities in this field are discussed.

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Funding

This work was financially supported by the National Natural Science Foundation of China (22174136 and 22004116) and the Alliance of International Science Organizations (ANSO No. 2020-109).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shenyang Jianzhu University, Shenyang, 110168, China

    Lili Gao

  2. State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun, 130022, People’s Republic of China

    Ye Tian, Altaf Hussain, Yiran Guan & Guobao Xu

  3. School of Applied Chemistry and Engineering, University of Science and Technology of China, No. 96 Jinzhai Road, Hefei, Anhui, 230026, People’s Republic of China

    Altaf Hussain & Guobao Xu

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Lili Gao and Ye Tian had the idea for the article, performed the literature search and data analysis, and drafted the work. Guobao Xu, Altaf Hussain, and Yiran Guan critically revised the work. Funding acquisition and supervision: Guobao XU. All authors read and approved the final manuscript.

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Gao, L., Tian, Y., Hussain, A. et al. Recent developments and challenges in resistance-based hydrogen gas sensors based on metal oxide semiconductors. Anal Bioanal Chem (2024). https://doi.org/10.1007/s00216-024-05213-z

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