Abstract
In the present work, we have investigated the structural, electronic and optical features of ZnS1−xOx graphene-like monolayer's for different x values compositions (0, 0.25, 0.5, 0.75 and 1) using the modified Becke–Johnson approach calculations within the framework of the density functional theory (DFT). The lattice parameter has been determined and found to deviate from Vegard’s law for the ZnS1−xOx monolayer. The electronic band structure has been explored where the band gap energy has been found to be non-zero and direct in nature. This makes our material useful for optoelectronic devices. Besides, the optical spectra of the real and imaginary parts of the dielectric function along with the refractive index have all been addressed and found to be in good accordance with previous works reported for ZnS and ZnO monolayer's.
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Novoselov KS, Geim AK, Morozov S, Jiang D, Zhang Y, Dubonos S, Grigorieva I, Firsov A (2004) Science 306(5696):666–669
Novoselov KS, Jiang D, Schedin F, Booth TJ, Khotkevich VV, Morozov SV, Geim AK (2005) Two-dimensional atomic crystals. Proc Natl Acad Sci USA 102(30):10451–10453
Jijun Z, Hongsheng L, Zhiming Y, Ruge Q, Si Z, Yangyang W, Cheng CL, Hongxia Z, Nannan H, Jing L, Yugui Y, Kehui W (2016) Rise of silicene: a competitive 2D material. Prog Mater Sci 83:24–151
Patrick V, Paola DP, Claudio Q, Jose A, Emmanouil F, Maria CA, Andrea R, Bénédicte E, Guy LL (2012) Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys Rev Lett 108(1–5):155501. https://doi.org/10.1103/PhysRevLett.108.155501
Vogt P (2018) Silicene, germanene and other group IV 2D materials. Beilstein J Nanotechnol 9:2665–2667. https://doi.org/10.3762/bjnano.9.248
Acun A, Zhang L, Bampoulis P, Farmanbar M, van Houselt A, Rudenko AN, Lingenfelder M, Brocks G, Poelsema B, Katsnelson MI, Zandvliet HJW (2015) Germanene: the germanium analogue of grapheme. J Phys Condens Matter 27:443002
Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF, Johnston-Halperin E, Kuno M, Plashnitsa VV, Robinson RD, Ruoff RS, Salahuddin S, Shan J, Shi L, Spencer MG, Terrones M, Windl W, Goldberger JE (2013) Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7(4):2898–2926. https://doi.org/10.1021/nn400280c
Tran V, Soklaski R, Liang Y, Yang L (2014) Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys Rev B 89(23):235319. https://doi.org/10.1103/PhysRevB.89.235319
Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y (2014) Black phosphorus field-effect transistors. Nat Nanotechnol 9(5):372–377. https://doi.org/10.1038/NNANO.2014.35
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6(3):147–150. https://doi.org/10.1038/NNANO.2010.279
Rodin AS, Carvalho A, Castro Neto AH (2014) Strain-induced gap modification in black phosphorus. Phys Rev Lett 112(17):176801
Peng X, Wei Q, Copple A (2014) Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene. Phys Rev B 90(8):085402. https://doi.org/10.1103/PhysRevB.90.085402
Fei R, Yang L (2014) Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett 14(5):2884. https://doi.org/10.1021/nl500935z
Buscema M, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A (2014) Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. https://doi.org/10.1021/nl5008085
Qiao J, Kong X, Hu Z-X, Yang F., Ji W (2014) Nat Commun 5
Reich ES (2014) Nature 506(7486):19–19
Nabetani Y, Okuno T, Aoki K, Kato T, Matsumoto T, Hirai T (2006) Epitaxial growth and optical investigations of ZnTeO alloys. Phys Status Solidi A 203(11):2653–2657
Nabetani Y, Okuno T, Aoki K, Kato T, Matsumoto T, Hirai T (2006) Photoluminescence properties of ZnTeO and ZnSeO alloys with dilute O concentrations. Phys Status Solidi C 3(4):1078–1081
Wang W, Bowen W, Spanninga S, Lin S, Phillips J (2009) Optical characteristics of ZnTeO thin films synthesized by pulsed laser deposition and molecular beam epitaxy. J Electron Mater 38(1):119–125
Lin AS, Wang W, Phillips JD (2009) Model for intermediate band solar cells incorporating carrier transport and recombination. J Appl Phys 105:064512
Wang W, Lin AS, Phillips JD, Metzger WK (2009) Generation and recombination rates at ZnTe: O intermediate band states. Appl Phys Lett 95(26):261107
Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W (2011) Demonstration of ZnTe1-xOx intermediate band solar cell. Jpn J Appl Phys 50:082304
He Y, Wang L, Zhang L, Li M, Shang X, Fang Y, Chen C (2012) Solubility limits and phase structures in epitaxial ZnOS alloy films grown by pulsed laser deposition. J Alloy Compd 534:81–85
Bellouche A, Gueddim A, Zerroug S, Bouarissa N (2016) Elastic properties and optical spectra of ZnS1-xOx dilute semiconductor alloys. Optik 127:11374–11378
Gueddim A, Zerroug S, Bouarissa N (2013) Optical characteristics of ZnTe1-xOx alloys from first-principles calculations. J Luminesc 135:243–247
Zerroug S, Gueddim A, Ajmal Khan M, Bouarissa N (2013) Ab initio study of structural parameters and optical properties of ZnTe1−xOx. Superlattices Microstruct 53:155–162
Becke AD, Johnson ER (2006) A simple effective potential for exchange. J Chem Phys 124:221101
Tran F, Blaha P (2009) Accurate band gaps of semiconductors and insulators with semilocal exchange-correlation potential. Phys Rev Lett 102:226401(1–4)
Hohenberg P, Kohn W (1964) Inhomogeneous electron gas. Phys Rev 136:B864–871
Blaha P, Schwarz K, Madsen GKH, Kvasnicka D, Luitz J (2002) WIEN2K + an augmented plane wave + local orbitals program for calculating crystal properties. Techn. Universitat, Wien, Austria, 2001, ISBN-3-9501031-1- 2
Wu Z, Cohen RE (2006) More accurate generalized gradient approximation for solids. Phys Rev B 73:235116(1–6)
Murnaghan FD (1944) The compressibility of media under extreme pressures. Proc Nat Acad Sci USA 30:244–247
Drissi N, Gueddim A, Bouarissa N (2020) First-principles study of rocksalt MgxZn1-xO: band structure and optical spectra. Philos Mag, pp 1–16
Khan MA, Gueddim A, Bouarissa N, Algarni H, Ziani H (2020) Band parameters for Zn 1-xMoxTe studied by means of spin-polarized first-principles calculations. J Computat Electron 19(1):38–46
Gueddim A, Zerroug S, Bouarissa N (2015) Composition dependence of the optical properties and band structure of the zinc-blende ZnS1-xOx: a first principles study. Philos Mag 95(24):2627–2638
Gueddim A, Madjet ME, Zerroug S, Bouarissa N (2016) First-principles investigations of electronic properties and optical spectra of Cd1−xMnxTe dilute magnetic semiconductors. Opt Quant Electron 48:551
Gueddim A, Zerroug S, Bouarissa N, Fakroun N (2017) Study of the elastic properties and wave velocities of rocksalt Mg1−xFexO: ab initio calculations. Chin J Phys 55(4):1423–1431
Zerroug S, Gueddim A, Bouarissa N (2016) Composition dependence of fundamental properties of Cd1−xCoxTe magnetic semiconductor alloys. J Comput Electron 15:473–478
Safari M, Izadi Z, Jalilian J, Ahmad I, Jalali-Asadabadi S (2017) Metal mono-chalcogenides ZnX and CdX (X=S, Se and Te) monolayers: Chemical bond and optical interband transitions by first principles calculations. Phys Lett A 381(6):663–670
Tu ZC (2010) First-principles study on physical properties of a single ZnO monolayer with graphene-like structure. J Comput Theor Nanosci 7:1182–1186
Tang ZK, Wong GKL, Yu P, Kawasaki M, Ohtomo A, Koinuma H, Segawa Y (1998) Appl Phys Lett 72(25):3270–3272
Bylsma RB, Becker WM, Kossut J, Debska U, Yoder-Short D (1986) Phys Rev B 33(12):8207–8215
Adachi S (2005) Properties of group IV III-V and II-VI semiconductors. Wiley, Chichester
Ozaki S, Adachi S (1994) Optical constants of ZnSxSe1-x ternary alloys. J Appl Phys 75:7470–7475
Suzuki KI, Adachi S (1998) Optical constants of CdxZn1-xSe ternary alloys. J Appl Phys 83:1018–1022
Gueddim A, Bouarissa N (2007) Theoretical investigation of the conduction and valence band offsets of GaAs1- x Nx/GaAs1- yNy heterointerfaces. Appl Surf Sci 253(17):7336–7341
Gueddim A, Zerdoum R, Bouarissa N (2006) Effect of nitrogen concentration on mechanical properties of GaAs1-xNx dilute alloys. Mater Sci Eng B 131(1–3):11–115. https://doi.org/10.1016/j.mseb.2006.03.032
Hervé P, Vandamme LKJ (1994) General relation between refractive index and energy gap in semiconductors. Infrared Phys Technol 35:609–615
Ravindra NM, Ganapathy P, Choi J (2007) Energy gap-rafractive index relations in semiconductors—an overview. Infrared Phys Technol 50:21–29
Yu PY, Cardona M (1996) Fundamentals of semiconductors. Phys Mater Prop 53:359–360
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Bouguerra, K., Aksas, A., Gueddim, A. et al. Study on graphene-like monolayer ZnS1−xOx: structural and optoelectronic properties. Theor Chem Acc 140, 161 (2021). https://doi.org/10.1007/s00214-021-02858-2
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DOI: https://doi.org/10.1007/s00214-021-02858-2