Quantum chemical study of the effect of π-bridge on the optical and electronic properties of sensitizers for DSSCs incorporating dioxythiophene and thiophene units

  • Tomás Delgado-Montiel
  • Jesús Baldenebro-LópezEmail author
  • Rody Soto-Rojo
  • Daniel Glossman-MitnikEmail author
Regular Article
Part of the following topical collections:
  1. Festschrift in honour of A. Vela


Twelve molecules were theoretically studied through density functional theory with the M06 density functional and the 6-31G(d) basis set. The molecular systems have potential application as sensitizers for dye-sensitized solar cells; these molecular structures are composed of triphenylamine as the donor moiety, different conjugation orders of thiophene and dioxythiophene as the π-bridge, and cyanoacrylic acid as the acceptor moiety. This study focused on the effect of the π-bridge on the properties of interest. Ground-state geometry optimization, the highest occupied molecular orbital, the lowest unoccupied molecular orbital, and their energy levels were calculated and analyzed. Absorption wavelengths, vertical energy, oscillator strength, and electron transitions were calculated through time-dependent density functional theory with the M06-2X and CAM-B3LYP functionals using the 6-31G(d) basis set. Driving force of injection (ΔG inj) was calculated and analyzed from the ground-state oxidation potential of the dye and the energy associated with the maximum absorption wavelength. As an important element presented in this study, chemical reactivity parameters are discussed, such as chemical hardness, electrodonating power, electroaccepting power, and electrophilicity index. In conclusion, a reliable methodology was presented and discussed to predict properties in triphenylamine derivative dyes considering the modification of the π-bridge.


DSSC DFT π-Bridge Planarity Chemical reactivity Sensitizer 



This work was supported by Universidad Autónoma de Sinaloa (UAS) and Consejo Nacional de Ciencia y Tecnología (CONACYT) and Centro de Investigación en Materiales Avanzados, S.C. (CIMAV). T.D.M. gratefully acknowledges a fellowship from CONACYT. J.B.L. and R.S.R. are professors and researchers at UAS and CONACYT. D.G.M. is a researcher at CIMAV and CONACYT. The authors also gratefully acknowledge Rodrigo Domίnguez from CIMAV for his technical assistance.

Supplementary material

214_2016_1989_MOESM1_ESM.docx (813 kb)
Supplementary material 1 (DOCX 813 kb)


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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Facultad de Ingeniería MochisUniversidad Autónoma de SinaloaLos MochisMexico
  2. 2.Departament de QuímicaUniversitat de les Illes BalearsPalma de MallorcaSpain
  3. 3.Laboratorio Virtual NANOCOSMOS, Departamento de Medio Ambiente y EnergíaCentro de Investigación en Materiales AvanzadosChihuahuaMexico

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