Abstract
By performing first-principles transport simulations, we demonstrate that n-type transfer curves can be obtained in armchair-edged graphene nanoribbon field effect transistors by the potassium atom and cobaltocene molecule doping, or substituting the carbon by nitrogen atom. The Dirac point shifts downward from 0 to −12 V when the n-type impurity concentration increases from 0 to 1.37%, while the transfer curves basically maintain symmetric feature with respect to the Dirac point. In general, the on/off current ratios are decreased and subthreshold swings are increased with the increasing doping level. Therefore, the performance of armchair-edged graphene nanoribbon field effect transistors can be controlled via tuning the impurity doping level.
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Acknowledgments
This work was supported in Japan by the Grant-in-Aid for Scientific Research on Priority Area and Next Generation Super Computing Project (Nanoscience Program) from the MEXT of Japan, in China by the NSFC (Grant Nos. 10774003, 10474123, 10434010, 90606023, and 20731160012) and National 973 Projects (Nos. 2002CB613505 and 2007CB936200, MOST of China), and in USA by Nebraska Research Initiative and DOE DE-EE0003174.
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Dedicated to Professor Shigeru Nagase on the occasion of his 65th birthday and published as part of the Nagase Festschrift Issue.
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Wang, L., Zheng, J., Zhou, J. et al. Tuning graphene nanoribbon field effect transistors via controlling doping level. Theor Chem Acc 130, 483–489 (2011). https://doi.org/10.1007/s00214-011-1026-5
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DOI: https://doi.org/10.1007/s00214-011-1026-5