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Shapes of Epitaxially Grown Quantum Dots

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Abstract

A variational model introduced by Spencer and Tersoff (Appl. Phys. Lett. 96:073114, 2010) to describe optimal faceted shapes of epitaxially deposited films is studied analytically in the case in which there are a non-vanishing crystallographic miscut and a lattice incompatibility between the film and the substrate. The existence of faceted minimizers for every volume of the deposited film is established. In particular, it is shown that there is no wetting effect for small volumes. Geometric properties including a faceted version of the zero contact angle are derived, and the explicit shapes of minimizers for small volumes are identified.

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Authors and Affiliations

  1. Department of Mathematical Sciences, Carnegie Mellon University, Pittsburgh, PA, USA

    Irene Fonseca

  2. Department Mathematik, Universität Erlangen-Nürnberg, Erlangen, Germany

    Aldo Pratelli

  3. Institut für Angewandte Mathematik, Universität Bonn, Bonn, Germany

    Barbara Zwicknagl

Authors
  1. Irene Fonseca
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  2. Aldo Pratelli
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  3. Barbara Zwicknagl
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Correspondence to Irene Fonseca.

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Fonseca, I., Pratelli, A. & Zwicknagl, B. Shapes of Epitaxially Grown Quantum Dots. Arch Rational Mech Anal 214, 359–401 (2014). https://doi.org/10.1007/s00205-014-0767-4

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  • DOI: https://doi.org/10.1007/s00205-014-0767-4

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