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Stability of Semiconductor States with Insulating and Contact Boundary Conditions

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Abstract.

We prove the existence of global smooth solutions near a given steady state of the hydrodynamic model of the semiconductors in a bounded domain with physical boundary conditions. The steady state and the doping profile are permitted to be of large variation but the initial velocity must be small. Two cases are considered. In the first one the problem is three-dimensional, the boundary conditions are insulating and the steady state velocity vanishes. In the second one, the problem is one-dimensional, the boundary is of contact type and the steady state velocity does not vanish.

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Authors and Affiliations

  1. Lefschetz Center for Dynamical Systems, Division of Applied Mathematics, Brown University, USA

    Yan Guo

  2. Department of Mathematics, Brown University, USA

    Walter Strauss

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  1. Yan Guo
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  2. Walter Strauss
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Correspondence to Yan Guo.

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Communicated by C.M. Dafermos

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Guo, Y., Strauss, W. Stability of Semiconductor States with Insulating and Contact Boundary Conditions. Arch. Rational Mech. Anal. 179, 1–30 (2006). https://doi.org/10.1007/s00205-005-0369-2

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  • DOI: https://doi.org/10.1007/s00205-005-0369-2

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