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Numerical simulations, design and modeling of methylammonium tin iodide halide-based single-junction perovskite solar cell

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Abstract

Nowadays, methylammonium tin iodide \({{\text{MASnI}}}_{3}\) halide-based perovskite solar cells are engaging the research community, because of its unique properties like excellent light absorption, narrow band gap, etc. Until now, 7.1% highest power conversion efficiency (PCE) is reported for \({{\text{MASnI}}}_{3}\) perovskite solar cells (PSCs). The focus of the research is the design and analysis of lead-free tin-halide-based perovskite solar using SCAPS TCAD tool. Moreover, the proposed device is analyzed by consider some parameters such as absorber layer thickness, variations of different electron transport layer (ETL) and hole transport layer (HTL) and thickness variation of ETL and HTL. In this work, 12.76% highest power conversion efficiency is attained by the optimized device. Furthermore, the focused research work could be consider for climatic conditions analysis, fabrication opportunities and tandem applications.

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Availability of data and materials

The datasets used and/or analyzed during the current study are available from the corresponding author on reasonable request.

Abbreviations

a(λ):

Absorption coefficient

ALT:

Absorber layer thickness

e− :

Electrons

\({E}_{{\text{c}}}\) :

CE level

\({E}_{{\text{t}}}\) :

TE level

EBD:

Energy band diagram

e−-h:

Electron hole pair

\({{\text{EF}}}_{{\text{n}}}\) :

Hole quasi-fermi level

\({{\text{EF}}}_{{\text{p}}}\) :

Electron quasi-fermi level

ETL:

Electron transport layer

ε :

Permittivity

\({\varepsilon }_{{\text{o}}}\) :

Permittivity of free space

FF:

Fill factor

h:

Holes

HTL:

Hole transport layer

G :

Generation rate

G(x):

Generation rate of e−-h pairs

\({J}_{{\text{p}}}\) :

Hole current density

\({J}_{{\text{mpp}}}\) :

Max. current density

\({J}_{{\text{sc}}}\) :

Current density (Short Circuit)

\({{{J}}}_{{\text{n}}}\) :

Electron current density

n:

Free electrons

\({{{N}}}_{{\text{D}}}^{+}\) :

Ionized donor (doping)

\({{{N}}}_{{\text{D}}}^{+}\) :

Ionized acceptor (doping concentration)

\({{{N}}}_{{\text{t}}}\) :

DD in \(({{\text{cm}}}^{-3})/{\text{eV}}\)

\({{{N}}}_{{\text{peak}}}\) :

Energy density at the peak of the distribution in \(({{\text{cm}}}^{-3})/{\text{eV}}\)

\({{{N}}}_{{\text{tot}}}\) :

Total defect density \(({{\text{cm}}}^{-3})\)

\({{{N}}}_{{\text{phot}}}(\lambda , x)\) :

Photon flux

\({{{N}}}_{{\text{phot}}0}(\lambda )\) :

Incident photon flux

\({{\text{n}}}_{{\text{t}}}\) :

Trapped electrons

p:

Free holes

PCE:

Power conversion efficiency

PSC:

Perovskite solar cell

\({{\text{p}}}_{{\text{t}}}\) :

Trapped holes

PV:

Photovoltaics

q :

Electronic charge

\({R}_{{\text{back}}}(\lambda )\) :

Reflection at the back contact

\({R}_{{\text{int}}}\) :

Internal refection at front contact

SCAPS:

Solar cell capacitance simulator

TCAD:

Technology computer-aided design

\({T}_{{\text{front}}}(\lambda )\) :

Transmission of the front contact

\({U}_{{\text{n}}}\) :

Electron recombination rate

\({U}_{{\text{p}}}\) :

Hole recombination rate

\({\mu }_{{\text{n}}}\) :

Electron mobility

\({\mu }_{{\text{p}}}\) :

Hole mobility

\({V}_{{\text{mpp}}}\) :

Maximum open circuit voltage

\({V}_{{\text{oc}}}\) :

Open circuit voltage

Ψ :

EP

ѡG:

Width of GED (by default 6.0)

X :

Position in the layer

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Authors and Affiliations

  1. Electrical Cluster, University of Petroleum and Energy Studies, Dehradun, India

    Sakshi Sharma, Rupendra Kumar Pachuari & Piyush Kuchhal

  2. University Institute of Computing, Chandigarh University, Punjab, India

    Keshav Kumar

  3. Department of Electrical Engineering, National Institute of Technology, Jamshedpur, India

    Aanchal Singh S. Vardhan

  4. Department of Electrical and Computer Engineering, Hawassa University, Hawassa, Ethiopia

    Baseem Khan

  5. Department of Electrical and Electronic Engineering Technology, Faculty of Engineering and the Built Environment, University of Johannesburg, Johannesburg, South Africa

    Baseem Khan & Ahmed Ali

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  1. Sakshi Sharma
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Contributions

SS, KK, RKP, PK, ASSV, BK and AA wrote the main manuscript text. SS, KK, RKP, PK, ASSV, BK and AA prepared figures. All authors reviewed the manuscript.

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Correspondence to Baseem Khan.

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Sharma, S., Kumar, K., Pachuari, R.K. et al. Numerical simulations, design and modeling of methylammonium tin iodide halide-based single-junction perovskite solar cell. Electr Eng 106, 1225–1239 (2024). https://doi.org/10.1007/s00202-023-02166-x

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