Electrical Engineering

, Volume 100, Issue 4, pp 2431–2437 | Cite as

Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC

  • Dongwoo Bae
  • Gilcho Ahn
  • Chungbu Jeong
  • Kwangsoo KimEmail author
Original Paper


In this study, we used a Ni/W/Ni-layered structure to provide low-resistive ohmic contacts with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and Ni/Ti/Ni as control groups with specific contact resistivities, and we verified the thermal stability of the structures by specific contact resistivity measurements and thermal duration tests. We found that for both n-type and p-type semiconductors, Ni/W/Ni is superior in terms of thermal stability and specific contact resistivity. Using XRD, we also analyzed the components involved in ohmic contact and thermal stability tests.


4H-SiC Ohmic contact Specific contact resistivity Ni/W/Ni Thermal stability 



This research was supported by the KIAT (Korea Institute for the Advancement of Technology) and supervised by MOTIE (Ministry of Trade, Industry and Energy) (N0001594).


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Dongwoo Bae
    • 1
  • Gilcho Ahn
    • 1
  • Chungbu Jeong
    • 1
  • Kwangsoo Kim
    • 1
    Email author
  1. 1.Department of Electronic EngineeringSogang UniversitySeoulKorea

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