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Electrical Engineering

, Volume 100, Issue 4, pp 2431–2437 | Cite as

Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC

  • Dongwoo Bae
  • Gilcho Ahn
  • Chungbu Jeong
  • Kwangsoo KimEmail author
Original Paper

Abstract

In this study, we used a Ni/W/Ni-layered structure to provide low-resistive ohmic contacts with good thermal stability for both n-type and p-type 4H-SiC. As reference, we used Ni and Ni/Ti/Ni as control groups with specific contact resistivities, and we verified the thermal stability of the structures by specific contact resistivity measurements and thermal duration tests. We found that for both n-type and p-type semiconductors, Ni/W/Ni is superior in terms of thermal stability and specific contact resistivity. Using XRD, we also analyzed the components involved in ohmic contact and thermal stability tests.

Keywords

4H-SiC Ohmic contact Specific contact resistivity Ni/W/Ni Thermal stability 

Notes

Acknowledgments

This research was supported by the KIAT (Korea Institute for the Advancement of Technology) and supervised by MOTIE (Ministry of Trade, Industry and Energy) (N0001594).

References

  1. 1.
    Ohyanagi T, Onose Y, Watanabe A (2008) Ti/Ni bilayer Ohmic contact on 4H-SiC. J Vac Sci Technol B 26:1359CrossRefGoogle Scholar
  2. 2.
    Liu S, Scofield J (1998) Thermally stable ohmic contacts to 6H- and 4H- p-type SiC. In: Proc 4th Int High Temperature Electron Conference, pp 88–92Google Scholar
  3. 3.
    Wang Z, Liu W, Wang C (2016) Recent progress in Ohmic contacts to silicon carbide for high-temperature applications. J Electron Mater 45(1):267–284CrossRefGoogle Scholar
  4. 4.
    Kuchuk AV, Guziewicz M, Ratajczak R, Wzorek M, Kladko VP, Piotrowska A (2008) Long-term stability of Ni-silicide ohmic contact to n-type 4H-SiC. Microelectron Eng 85(10):2142–2145CrossRefGoogle Scholar
  5. 5.
    Kuchuk AV, Guziewicz M, Ratajczak R, Wzorek M, Kladko VP, Piotrowska A (2009) Thermal degration of Au/Ni2Si/n-SiC ohmic contacts under differenct conditions. Mater Sci Eng B 165(1–2):38–41CrossRefGoogle Scholar
  6. 6.
    Liu S, He Z, Zheng L, Liu B, Zhang F, Dong L, Tian L, Shen Z, Wang J, Huang Y, Fan Z, Liu X, Yan G, Zhao W, Wang L, Sun G, Yang F, Zeng Y (2014) The thermal stability study and improvement of 4H-SiC ohmic contact. Appl Phys Lett 105:122106CrossRefGoogle Scholar
  7. 7.
    Kuchuk AV, Borowicz P, Wzorek M, Borysiewicz M, Ratajczak R, Golaszewska K, Kaminska E, Kladko V, Piotrowska A (2016) Ni-based ohmic contacts to n-type 4H-SiC: the formation mechanism and thermal stability. Adv Condens Matter Phys vol 2016, Article ID 9273702Google Scholar
  8. 8.
    Vivona M, Greco G, Giannazzo F, Lo. Nigro R, Rascunà S, Saggio M, Roccaforte F (2014) Thermal stability of the current transport mechanisms in Ni-based ohmic contacts on n- and p-implanted 4H-SiC. Semicond Sci Technol 29(7) Article ID 075018CrossRefGoogle Scholar
  9. 9.
    Park J, Hollyway PH (2005) Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide. J Vac Sci Technol B 23:486CrossRefGoogle Scholar
  10. 10.
    Linchao H, Huajun S, Kean L, Yiyu W, Yidan T, Yun B, Hengyu X, Yudong W, Xinyu L (2014) Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni. J Semicond 35:072003CrossRefGoogle Scholar
  11. 11.
    Kolaklieva L, Kakanakov R, Lepoeva G, Gomes JB, Marinova T (2005) Au/Ti/Al contacts to SiC for power applications: electrical, chemical and thermal properties. In: 24th International Conference on Microelectronics, pp 421–424Google Scholar
  12. 12.
    Tsukimoto S, Nitta K, Sakai T, Moriyama M, Murakami M (2004) Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC. J Electron Mater 33:460CrossRefGoogle Scholar
  13. 13.
    Cole MW, Joshi PC, Hubbard CW, Wood MC, Ervin MH, Geil B, Ren F (2000) Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications. J Appl Phys 88:2652CrossRefGoogle Scholar
  14. 14.
    Kagh-Buetow KC, Okojie RS, Lukco D, Mohney SE (2015) Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC. Semicond Sci Technol 30:5397Google Scholar
  15. 15.
    Zhao F, Islam MM, Huang CF (2010) Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC. Mater Lett 64:2593CrossRefGoogle Scholar
  16. 16.
    Reeves GK (1980) Specific contact resistance using a circular transmission line model. Solid-State Electron 23:487–490CrossRefGoogle Scholar
  17. 17.
    Lee SK, Zetterling CM, Ostling M, Palmquist JP, Janssion U (2002) Processing and characterization of silicon carbide(6H- and 4H-SiC) contacts for high power and high temperature device applications. Microelectron Eng 60:261–268CrossRefGoogle Scholar
  18. 18.
    Nikitina IP, Vassilevski KV, Wright NG, Horsfall AB, O’Neill AG, Johnson CM (2005) Formation and role of graphite and nickel silicide in nickel based onmic contacts to n-type silicon carbide. J Appl Phys 97(8):083709-1–083709-7CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Dongwoo Bae
    • 1
  • Gilcho Ahn
    • 1
  • Chungbu Jeong
    • 1
  • Kwangsoo Kim
    • 1
    Email author
  1. 1.Department of Electronic EngineeringSogang UniversitySeoulKorea

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