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Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters

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Most of the transistor noise models refer to the intrinsic device, providing relationships between the transistor noise model parameters and the noise parameters of the intrinsic device. Having in mind that the measured noise parameters correspond to the whole device including the device parasitics, the parameters of the noise models are most often determined by using optimizations in circuit simulators. In this paper, an efficient neural approach for straightforward determination of the noise model parameters, avoiding optimizations, is proposed. A detailed validation of the proposed approach was done by comparison of the measured transistor noise parameters with those obtained by using the extracted noise model parameters for two noise models—the Pospieszalski’s noise model and the noise wave model.

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The work was supported by the TR-32052 Project of the Serbian Ministry of Education, Science and Technological Development. The authors would like to thank prof. Alina Caddemi, University of Messina, Italy, for providing the measured data.

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Correspondence to Vladica Ɖorđević.

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Ɖorđević, V., Marinković, Z., Marković, V. et al. Development and validation of ANN approach for extraction of MESFET/HEMT noise model parameters. Electr Eng 100, 645–651 (2018).

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