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Analytical and experimental study on the surface generation mechanism in two-dimensional ultrasonic-assisted grinding of silicon carbide

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Abstract

Two-dimensional ultrasonic-assisted grinding (2D-UAG) is generally considered as an effective machining method for hard and brittle materials. However, due to the complicated grinding kinematics and material removal behaviors, the surface generation mechanism in 2D-UAG still has not been elaborately addressed. In this study, a numerical model considering the dynamic cutting behaviors of multiple abrasive grits and the material removal mechanism of silicon carbide (SiC) is proposed to reveal the kinematic characteristics during grinding and to predict the surface roughness. In the model development, a single abrasive grain is simplified as a cutting point and the cutting depth of individual grit is obtained based on the positional relationships among trajectory points. Theoretical analysis indicates that the cutting depth of abrasive grits in 2D-UAG approximately follows the normal distribution, which is similar with that in conventional grinding (CG). The introduction of two-dimensional ultrasonic vibration significantly alters the distribution ranges and characteristics of cutting speed and cutting angles of active grains relative to the workpiece. The experimental results demonstrate that the prediction error of this model is limited within 10.06%. Furthermore, in the machining conditions discussed in this study where the electroplated diamond grinding wheel with a grit size of 240# is used, the workpiece material is mainly removed by brittle fracture. Expanding the distribution range of the cutting angle in the YOZ plane can effectively suppress the adverse influences of nonuniform grain protrusion height and reduce the groove depth on machined surfaces, which are conducive to improve the ground surface quality.

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Data availability

The data and material in this study are available from the corresponding author upon reasonable request.

Code availability

The source code in this study is available from the corresponding author upon reasonable request.

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Funding

The present work was financially sponsored by the Fundamental Research Funds for the Central Universities in China (Grant Number: WUT: 2020III033GX).

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Authors and Affiliations

  1. School of Mechanical and Electronic Engineering, Wuhan University of Technology, Wuhan, 430070, People’s Republic of China

    Hongbo Li, Tao Chen, Zhenyan Duan, Yiwen Zhang & Haotian Li

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  1. Hongbo Li
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  2. Tao Chen
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  3. Zhenyan Duan
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Contributions

Hongbo Li: methodology, investigation, and writing—original draft preparation. Tao Chen: writing— review and editing, and supervision. Zhenyan Duan: writing—original draft preparation, validation, and visualization. Yiwen Zhang: data curation. Haotian Li: software and formal analysis.

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Correspondence to Tao Chen.

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Li, H., Chen, T., Duan, Z. et al. Analytical and experimental study on the surface generation mechanism in two-dimensional ultrasonic-assisted grinding of silicon carbide. Int J Adv Manuf Technol 124, 363–382 (2023). https://doi.org/10.1007/s00170-022-10443-5

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  • DOI: https://doi.org/10.1007/s00170-022-10443-5

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