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Chemically grafted polyurethane/graphene ternary slurry for advanced chemical–mechanical polishing of single-crystalline SiC wafers

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Abstract

This paper aims to develop an innovative ternary slurry named as G-slurry to be fabricated by a chemically grafted method to strongly bond PU/GO (polyurethane microspheres/ graphene oxide nanoplatelets) and with addition of SiO2 abrasives. This G-slurry is demonstrated for efficient CMP of Si face of 4H-SiC wafers. FTIR spectra is adopted to prove having strong bonding between PU and GO by chemical modification of PU microspheres. With this G-slurry, a semi-fixed abrasive polishing (SFAP) process has been investigated to effectively polish SiC wafers, and its performance is compared with that of a counterpart 1 slurry which is consisting of PU and SiO2 served as a benchmark in this work. In preparation of G-slurry, three important processing parameters include weight fraction of graphene oxide (GO), sonication time, and pH value. Effects on material removal rate (MRR), surface roughness, and surface roughness improvement rate (SRIR) of polished SiC wafers are investigated. SEM, Raman, and XPS (X-ray photoelectron spectroscopy) spectra are adopted to analyze the specific CMP mechanism of polished SiC wafers by G-slurry. Based on the mechanism, three key factors of G-slurry have been verified with its better performance on CMP of SiC wafers compared with two counterpart slurries and shown to be potentially applied for SiC wafer processing.

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Acknowledgements

Authors are grateful for financial support from Ministry of Science and Technology in Taiwan on this work under contract MOST 110-2221-E-035-066.

Funding

Authors are grateful for financial support from Ministry of Science and Technology in Taiwan on this work under contract MOST 110–2221-E-035–066.

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Authors and Affiliations

  1. Department of Mechanical and Computer Aided Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen, Taichung, 40724, Taiwan

    Hsien-Kuang Liu & Ping-Chun Hsieh

  2. Department of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da’an Dist., Taipei, 10607, Taiwan

    Chao-Chang A. Chen

Authors
  1. Hsien-Kuang Liu
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  2. Chao-Chang A. Chen
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  3. Ping-Chun Hsieh
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Contributions

All authors contributed to the study conception and design. Experimental procedure, data collection and analysis were performed by H-KL, C-CAC, and P–CH. The first draft of the manuscript was written by H-KL and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Hsien-Kuang Liu.

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Liu, HK., Chen, CC.A. & Hsieh, PC. Chemically grafted polyurethane/graphene ternary slurry for advanced chemical–mechanical polishing of single-crystalline SiC wafers. Int J Adv Manuf Technol 120, 7157–7169 (2022). https://doi.org/10.1007/s00170-022-09241-w

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  • DOI: https://doi.org/10.1007/s00170-022-09241-w

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