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Research on improving the discharge cutting efficiency of N-type high-resistance silicon based on electroless plating

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Abstract

Aimed at the low efficiencies of wire electrical discharge machining of high-resistance silicon, this paper proposes a procedure that also improves the efficiency of silicon crystal discharge cutting, that is, the use of electroless copper plating on the silicon surface. A semiconductor equivalent discharge circuit model was established, the current–voltage characteristics of silicon crystals under different power feeding methods were studied, and the processing performances of different power feeding methods of silicon were compared. The test results show that electroless copper plating can significantly reduce the contact resistance of silicon and total resistance of the loop and increase the processing current. When the voltage is 160 V, the processing efficiency of the copper foil increases by 73%, while its surface roughness and width also slightly increase.

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Acknowledgements

We thank all the individuals who contributed to this manuscript.

Funding

This work is supported by the National Key Laboratory of Science and Technology on Helicopter Transmission (Nanjing University of Aeronautics and Astronautics) (Grant No. HTL-A-20G05). This work is supported by the National Natural Science Foundation of China (Grant No. 51675272).

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Authors and Affiliations

  1. College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, YudaoStreet, Nanjing, 210016, China

    Zhibin Chen, Jinchao Zhao, Yan Qin, Chuangchaung Guo & Rong Wan

  2. National Key Laboratory of Science and Technology On Helicopter Transmission, Nanjing University of Aeronautics and Astronautics, Nanjing, China

    Mingbo Qiu

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  1. Zhibin Chen
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  2. Mingbo Qiu
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  3. Jinchao Zhao
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  4. Yan Qin
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  5. Chuangchaung Guo
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  6. Rong Wan
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Contributions

Zhibin Chen and Mingbo Qiu completed the experiment; Zhao Jinchao was in charge of part of the experiment; Qin Yan, Chuangchuang, Guo and Rong Wan were in charge of data sorting.

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Correspondence to Mingbo Qiu.

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Zhibin Chen and Mingbo Qiu contributed equally to this work and are the co-first authors.

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Chen, Z., Qiu, M., Zhao, J. et al. Research on improving the discharge cutting efficiency of N-type high-resistance silicon based on electroless plating. Int J Adv Manuf Technol 119, 5839–5850 (2022). https://doi.org/10.1007/s00170-021-08240-7

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