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Material removal rate of double-faced mechanical polishing of 4H-SiC substrate

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Abstract

Silicon carbide (SiC) has been a promising the third-generation semiconductor power device material for high-power, high-temperature, and substrate applications. However, under certain surface quality requirement, its current processing efficiency is the bottleneck. Therefore, it aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been established, and the kinematics equations have been created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m = − 1, speed rate of lower plate to the inside sun gear n = 5, and SiC substrate distribution radius RB = 75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established, and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirms the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

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Authors and Affiliations

  1. School of Mechanical & Automotive Engineering, Qilu University of Technology (Shandong Academy of Sciences), 250353, Jinan, China

    Peng Zhang, Jingfang Yang & Huadong Qiu

  2. Shandong Institute of Mechanical Design and Research, Jinan, 250353, China

    Peng Zhang, Jingfang Yang & Huadong Qiu

Authors
  1. Peng Zhang
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  2. Jingfang Yang
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  3. Huadong Qiu
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Contributions

Peng Zhang: conceptualization, experiments, and writing; Jingfang Yang: data analysis; Huadong Qiu: supervision, investigation.

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Correspondence to Peng Zhang.

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Zhang, P., Yang, J. & Qiu, H. Material removal rate of double-faced mechanical polishing of 4H-SiC substrate. Int J Adv Manuf Technol 118, 3983–3993 (2022). https://doi.org/10.1007/s00170-021-08186-w

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  • DOI: https://doi.org/10.1007/s00170-021-08186-w

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