Abstract
Grain-arranged grinding tool refers to a kind of grinding tool in which the position of abrasive grains on grinding tool can be controlled artificially. In this paper, a new method for fabrication of grain-arranged grinding tool is proposed, which is to directly coat the mask material (UV ink) on the metal substrate, and then by combining laser ablation and grain electroplating technology, the grinding tool with orderly arrangement of abrasive grains can finally be obtained. For the proposed fabrication method, the fabrication process is introduced in detail, mainly including the relationship between laser ablation parameters and the ablated mask hole depth, and the relationship between mask hole aspect ratio and the morphology of the plated layer in the mask hole. It is found that for laser ablation of UV ink, the critical laser power to remove the UV ink is 1.79 W, and the critical ablation threshold is 0.269 J/cm2. When the used laser power is 5.4–21 W, the relationship between laser power and the ablated hole depth is basically linear. For mask hole electroplating process, it is found that the unevenness of the plated layer in the mask hole and the growth rate of the plating layer increase with the decrease of the mask hole aspect ratio. By using the proposed method, grain-arranged grinding tool with 6 mm diameter, 95 μm grain size, and 150 μm grain spacing has been successfully fabricated, and its processing performance has been preliminarily validated by machining experiments.
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Abbreviations
- D :
-
The ablated hole diameter
- h :
-
Height of the laser-ablated hole
- D 0.2 :
-
Diameter size at the hole height of h/5
- K :
-
Slope of the hole contour at the height of 4h/5
- ω 0 :
-
Diameter of laser beam waist
- φ 0 :
-
Center energy density of the laser beam
- E p :
-
Energy of single laser pulse
- P :
-
Laser power
- f :
-
Frequency of laser pulse
- f s :
-
Sampling frequency of the dynamometer
- φ th :
-
The critical energy density that causes permanent damage to material
- l :
-
Distance laser scans
- v :
-
Laser scanning speed
- E l :
-
Energy outputted by the laser
- E i :
-
Energy actually absorbed by the one ablation mask hole
- α :
-
Energy input coefficient
- E c :
-
Heat conduction energy
- E r :
-
Activation energy
- T m :
-
Critical transition temperature of the gasification of the material
- T a :
-
The ambient temperature
- E r1, E r2 :
-
Energy consumed in the first and the second reaction stages
- ρ :
-
Density of the mask material
- M :
-
Average molar mass of mask layer material
- F :
-
Faraday constant
- ▽c :
-
Concentration gradient of the plating solution above the plated surface
- A :
-
Cross-sectional area of the plating system
- R i :
-
Air constant
- T s :
-
Plating solution temperature
- ψ i :
-
Potential gradient of the plating solution above the plated surface
- h c :
-
Thickness of the plated layer in the mask hole
- s d :
-
Thickness different of the plated layer in the mask hole
- J d, J c, J e :
-
Current density caused by diffusion, convection, and electromigration, respectively
- z B :
-
Ionic charge of substance B
- v c :
-
Flow velocity of the plating solution
- c :
-
Molar concentration of substance B
- r s :
-
Thickness of the Nernst diffusion layer
- r o1 :
-
Aspect ratio of the ablation mask hole
- r o1, r o2 :
-
Mask hole aspect ratios less than 1 and greater than 1, respectively
- N :
-
The number of holes ablated within the distance l
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This work was supported by the National Natural Science Foundation of China (Grant Number 51575096) and the China Fundamental Research Funds for the Central Universities (Grant Number N180304014).
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Jun Cheng contributed to the conception of the study, Jun Wu performed the data analyses and wrote the manuscript, Zhaozhi Guo performed the experiment, and Chunchun Gao and Tao Yu helped perform the analysis with constructive discussions.
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Cheng, J., Wu, J., Guo, Z. et al. Research on a novel fabricating method of diamond grinding tool with defined grain arrangement. Int J Adv Manuf Technol 115, 2233–2253 (2021). https://doi.org/10.1007/s00170-021-07199-9
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DOI: https://doi.org/10.1007/s00170-021-07199-9