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Hybrid CO2 laser-polishing process for improving material removal of silicon carbide

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Abstract

A novel hybrid polishing process, called laser-assisted polishing (LAP), was proposed in this study for improving the material removal rate (MRR) of polishing silicon carbide (SiC) by combining a CO2 laser source and a conventional polishing machine. The results showed that the MRR increased by 79.0% using the LAP process on the cracked and oxidized SiC sample surface as compared to that using the mechanical polishing of a normal sample. It was also found that the laser-induced crack was the main mechanism underlying the growth of MRR in the LAP process. It was expected that the proposed LAP process and the material removal mechanism might shed light on the expansion of the hybrid machining field and better industrial application of SiC.

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Abbreviations

LAP:

Laser-assisted polishing

MRR:

Material removal rate

SiC:

Silicon carbide

RB SiC:

Reaction bonded SiC (manufacturing method)

S SiC:

Sintered SiC (manufacturing method)

NSF:

Not specified

LAM:

Laser-assisted machining

UV:

Ultraviolet

CMP:

Chemical-mechanical or chemo-mechanical polishing

PDMS:

Polydimethylsiloxane

LBM:

Laser beam machining

P:

Mechanical polishing

N sample:

Sample with no crack or oxidation (as-received)

CO sample:

Sample with crack and oxidation

C sample:

Sample with crack (oxidation inhibited)

RPM:

Rotation per minute

XRD:

X-ray diffractometer

XPS:

X-ray photoemission spectroscopy

R a :

Average roughness of surface measured from 1D line profile

R pv :

Peak-to-valley roughness of surface measured from 1D line profile

S a :

Average roughness of surface measured from 2D area

CCI:

Coherent correlation interferometry

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Funding

This research was supported by the Korea Basic Science Institute (KBSI) Creative Convergence Research Project (CAP-PN2018007) funded by the National Research Council of Science and Technology (NST), and also supported by the Basic Research Lab Program through the National Research Foundation of Korea (NRF) funded by the MSIT (2018R1A4A1059976).

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Authors and Affiliations

  1. Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul, 08826, Republic of Korea

    Mincheol Kim, Sangmin Bang, Dong-Hyeon Kim, Hyun-Taek Lee & Sung-Hoon Ahn

  2. Institute of Advanced Machines and Design, Seoul National University, Seoul, 08826, Republic of Korea

    Mincheol Kim, Dong-Hyeon Kim & Sung-Hoon Ahn

  3. Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 34133, Republic of Korea

    Mincheol Kim & Geon-Hee Kim

  4. Soft Robotic Research Center, Seoul National University, Seoul, 08826, Republic of Korea

    Hyun-Taek Lee

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  1. Mincheol Kim
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  2. Sangmin Bang
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Correspondence to Sung-Hoon Ahn.

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Kim, M., Bang, S., Kim, DH. et al. Hybrid CO2 laser-polishing process for improving material removal of silicon carbide. Int J Adv Manuf Technol 106, 3139–3151 (2020). https://doi.org/10.1007/s00170-019-04846-0

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  • DOI: https://doi.org/10.1007/s00170-019-04846-0

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