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Hybrid CO2 laser-polishing process for improving material removal of silicon carbide


A novel hybrid polishing process, called laser-assisted polishing (LAP), was proposed in this study for improving the material removal rate (MRR) of polishing silicon carbide (SiC) by combining a CO2 laser source and a conventional polishing machine. The results showed that the MRR increased by 79.0% using the LAP process on the cracked and oxidized SiC sample surface as compared to that using the mechanical polishing of a normal sample. It was also found that the laser-induced crack was the main mechanism underlying the growth of MRR in the LAP process. It was expected that the proposed LAP process and the material removal mechanism might shed light on the expansion of the hybrid machining field and better industrial application of SiC.

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Laser-assisted polishing


Material removal rate


Silicon carbide


Reaction bonded SiC (manufacturing method)

S SiC:

Sintered SiC (manufacturing method)


Not specified


Laser-assisted machining




Chemical-mechanical or chemo-mechanical polishing




Laser beam machining


Mechanical polishing

N sample:

Sample with no crack or oxidation (as-received)

CO sample:

Sample with crack and oxidation

C sample:

Sample with crack (oxidation inhibited)


Rotation per minute


X-ray diffractometer


X-ray photoemission spectroscopy

R a :

Average roughness of surface measured from 1D line profile

R pv :

Peak-to-valley roughness of surface measured from 1D line profile

S a :

Average roughness of surface measured from 2D area


Coherent correlation interferometry


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This research was supported by the Korea Basic Science Institute (KBSI) Creative Convergence Research Project (CAP-PN2018007) funded by the National Research Council of Science and Technology (NST), and also supported by the Basic Research Lab Program through the National Research Foundation of Korea (NRF) funded by the MSIT (2018R1A4A1059976).

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Correspondence to Sung-Hoon Ahn.

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Kim, M., Bang, S., Kim, DH. et al. Hybrid CO2 laser-polishing process for improving material removal of silicon carbide. Int J Adv Manuf Technol 106, 3139–3151 (2020).

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  • Laser-assisted polishing
  • Hybrid machining
  • Silicon carbide
  • Material removal rate