Abstract
Chemo-mechanical-grinding (CMG) is a hybrid process which integrates chemical reaction and mechanical grinding between abrasives and workpiece into one process. It has been successfully applied into manufacturing process of silicon wafers where both geometric accuracy and surface quality are required. This paper aims to study the potential of CMG process in manufacturing process of single crystal sapphire wafers. The basic material removal mechanism in terms of chemical effect and mechanical effect in CMG process has been analysed based on experiment results of two different kinds of CMG wheels. The experiment results suggest that chromium oxide (Cr2O3) performs better than silica (SiO2) in both material removal rate (MRR) and surface quality. It also reveals that, no matter under dry condition or wet condition, CMG is with potential to achieve excellent surface quality and impressive geometric accuracy of sapphire wafer. Meanwhile, test result by Raman spectrum shows that, by using Cr2O3 as abrasive, the sub-surface damage of sapphire wafer is hardly to be detected. Transmission electron microscopy (TEM) tells that the sub-surface damage, about less than 50 nm, might remain on the top surface if chemical effect is not sufficient enough to meet the balance with mechanical effect in CMG process.
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Wu, K., Zhou, L., Shimizu, J. et al. Study on the potential of chemo-mechanical-grinding (CMG) process of sapphire wafer. Int J Adv Manuf Technol 91, 1539–1546 (2017). https://doi.org/10.1007/s00170-016-9836-1
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DOI: https://doi.org/10.1007/s00170-016-9836-1