Advertisement

Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory

  • Zone-Ching Lin
  • Ren-Yuan Wang
  • Zih-Wun Jhang
ORIGINAL ARTICLE
  • 117 Downloads

Abstract

This study uses the polishing pad with cross pattern, and it is supposed that the contact area between polishing pad surface of cross pattern and wafer is Gaussian distribution to establish and analyze an innovative abrasive removal depth theoretical model of chemical mechanical polishing (CMP) silicon wafer. In this model, it uses the binary image pixel division to calculate polishing times and it derives the contact force of each abrasive particle and uses the specific down force energy (SDFE) theoretical equation to calculate the abrasive removal depth on each abrasive particle after down force being applied. This study carries out CMP silicon wafer experiment as well as atomic force microscopy (AFM) measurement experiment of SDFE of silicon wafer. The abrasive removal depth of silicon wafer acquired from simulation analysis is compared with the abrasive removal depth of silicon wafer obtained from CMP experiment of silicon wafer, and the difference in between will also be analyzed. It shows that the difference between the results of simulation and experiment is in the acceptable range.

Keywords

Silicon wafer Chemical mechanical polishing Specific down force energy Abrasive removal depth Polishing times 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Binning G, Quate CF, Gerber C (1986) Atomic force microscope. Phys Rev Lett 56:930–933CrossRefGoogle Scholar
  2. 2.
    Lübben JF, Johannsmann D (2004) Nanoscale high-frequency contact mechanics using an AFM tip and a quartz crystal resonator. Langmuir 20:3698–3703CrossRefGoogle Scholar
  3. 3.
    Tseng AA (2010) A comparison study of scratch and wear properties using atomic force microscopy. Appl Surf Sci 256:4246–4252CrossRefGoogle Scholar
  4. 4.
    Preston FW (1927) The theory and design of plate glass polishing machines. J Soc Glass Technology 11:214–247Google Scholar
  5. 5.
    Cook LM (1990) Chemical process in glass polishing. J Non-Crystalline Solid 120:152–171CrossRefGoogle Scholar
  6. 6.
    Chekina OG, Keer LM (1998) Wear-contact problems and modeling of chemical mechanical polishing. Journal of Electrochemical Society 145:2100–2106CrossRefGoogle Scholar
  7. 7.
    Jiang J, Sheng F, Ren F (1998) Modeling of two-body abrasive wear under mutliple contact condition. Wear 217:35–45CrossRefGoogle Scholar
  8. 8.
    Lin TR (2007) An analytical model of the material removal rate between elastic and elastic-plastic deformation for a polishing process. Int J Adv Manuf Technol 32:675–681CrossRefGoogle Scholar
  9. 9.
    Jongwon S, Cyriaque PS, Kim AT, Tichy JA, Cale TS (2003) Multiscale material removal modeling of chemical mechanical polishing. Wear 254:307–320CrossRefGoogle Scholar
  10. 10.
    Lin ZC, Chen CC (2005) Method for analyzing effective polishing frequency and times for chemical mechanical planarization polishing wafer with different polishing pad profiles. Journal of the Chinese Society of Mechanical Engineers 26:671–676Google Scholar
  11. 11.
    Lin ZC, Huang WS, Tsai JS (2012) A study of material removal amount of sapphire wafer in application chemical mechanical polishing with different polishing pads. Mechanical Science and Technology 26:2353–2364CrossRefGoogle Scholar
  12. 12.
    Lin ZC, Wang RY (2014) Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes. Int J Adv Manuf Technol 74:25–38CrossRefGoogle Scholar
  13. 13.
    Lin ZC, Hsu YC (2012) A calculating method for the fewest cutting passes on sapphire substrate at a certain depth using specific down force energy with an AFM probe. J Mater Process Technol 212:2321–2331CrossRefGoogle Scholar
  14. 14.
    Zhao Y, Maietta DM, Chang L (2000) An asperity microcontact model incorporating the transition from elastic deformation to fully plastic flow. J Tribol ASME 122:86–93CrossRefGoogle Scholar
  15. 15.
    Qina K, Moudgilb B, Park CW (2004) A chemical mechanical polishing model incorporating both the chemical and mechanical effects. Thin Solid Films 446:277–286CrossRefGoogle Scholar
  16. 16.
    Steigerwald JM, Murarka SP, Gutmann RJ (1997) Chemical mechanical planarization of microelectronic materials. John Wiley and Sons, New YorkCrossRefGoogle Scholar
  17. 17.
    Yu T, Yu C, Orlowski M (1993) A statistical polishing pad model for chemical-mechanical polishing. Proceedings of the 1993 InternationalElectron Devices Meetings, IEEE, Washington DC, pp 865–868Google Scholar
  18. 18.
    El-Kareh B (1995) Fundamentals of semiconductor processing technologies. Kluwer Academic Publishers, MassachusettsCrossRefGoogle Scholar
  19. 19.
    Johnson KL (1985) Contact mechanics. Cambridge University Press, CambridgeCrossRefzbMATHGoogle Scholar
  20. 20.
    Greenwood JA, Williamson JBP (1966) Contact of nominally flat surfaces. Proc R Soc London, Ser A 295:300–319CrossRefGoogle Scholar
  21. 21.
    Luo J, Dornfeld DA (2001) Material removal mechanism in chemical mechanical polishing. IEEE Transaction on Semiconductor Manufacturing 14:112–133CrossRefGoogle Scholar
  22. 22.
    Zhao Y, Chang L (2002) A micro-contact and wear model for chemical–mechanical polishing of silicon wafers. Wear 252:220–226CrossRefGoogle Scholar

Copyright information

© Springer-Verlag London 2016

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringNational Taiwan University of Science and TechnologyTaipeiTaiwan
  2. 2.Department of Mechanical EngineeringArmy Academy R. O. CZhongli CityTaiwan

Personalised recommendations