Development of a pad conditioning simulation module with a diamond dresser for CMP applications

  • Hsiu-Ming Yeh
  • Kuo-Shen ChenEmail author


Chemical mechanical polishing (CMP) is a key fabrication route for the modern semiconductor process. The degradation of the polishing pad during the polishing process can significantly influence the polishing performance. Therefore, pads need to be conditioned frequently and an efficient emulator for the dressing process optimization is required to guide the dressing process. In this work, a pad condition simulation module is designed and demonstrated. In addition, a new performance index, called as recover–area ratio (RAR), is defined. Subsequently, a series of parametric studies are performed to investigate the influence of key geometric or processing parameters for a pad conditioning process in terms of optimizing the conditioning performance. Finally, results reveal that it is possible to correlate the pad RAR and Preston’s constant variation and to integrate the pad conditioning emulator with the pre-developed CMP polishing simulation module as a whole utility to further optimize the existing CMP processes.


Chemical mechanical polishing (CMP) Dressing Computer simulation CAD Preston’s constant 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Zantye PB, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R 45:89–220CrossRefGoogle Scholar
  2. 2.
    Preston F (1927) Optimization of computer controlled polishing. Glass Tech 11:214–219Google Scholar
  3. 3.
    Zhou C, Shan L, Hight JR, Ng SH, Danyluk S (2002) Fluid pressure and its effects on chemical mechanical polishing. Wear 253(3–4):430–437CrossRefGoogle Scholar
  4. 4.
    Wang YC, Yang TS (2007) Effects of pad grooves on chemical mechanical planarization. J Electrochem Soc 154(6):H486–H494CrossRefGoogle Scholar
  5. 5.
    Hooper BJ, Byrne G, Galligan S (2002) Pad conditioning in chemical mechanical polishing. J Mater Process Technol 123:107–113CrossRefGoogle Scholar
  6. 6.
    McGrath J, Davis C (2004) Polishing pad surface characterisation in chemical mechanical planarization. J Mater Process Technol 153–154:666–673CrossRefGoogle Scholar
  7. 7.
    Park KH, Kim HJ, Chang OM, Jeong HD (2007) Effects of pad properties on material removal in chemical mechanical polishing. J Mater Process Technol 187–188:73–76CrossRefGoogle Scholar
  8. 8.
    Lin YY, Lo SP (2003) A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process. Int J Adv Manuf Technol 22:401–409CrossRefGoogle Scholar
  9. 9.
    Lin YY, Lo SP (2004) A study of a finite element model for the chemical mechanical polishing process. Int J Adv Manuf Technol 23:644–650CrossRefGoogle Scholar
  10. 10.
    Chiu JT, Lin YY (2008) Modal analysis of multi-layer structure for chemical mechanical polishing process. Int J Adv Manuf Technol 37:83–91CrossRefGoogle Scholar
  11. 11.
    Lo SP, Lin YY, Huang JC (2007) Analysis of retaining ring using finite element simulation in chemical mechanical polishing process. Int J Adv Manuf Technol 34:547–555CrossRefGoogle Scholar
  12. 12.
    Liao YS, Hong PW, Yang CT (2004) A study of the characteristics of the diamond dresser in the CMP process. Key Engineering Materials 257–258:371–376CrossRefGoogle Scholar
  13. 13.
    Zhou ZZ, Yuan JL, Lv BH, Zheng JJ (2008) Study on pad conditioning parameters in silicon wafer CMP process. Key Engineering Materials 359–360:309–313CrossRefGoogle Scholar
  14. 14.
    Sung J, Pai YL (2000) CMP pad dresser: A diamond grid solution. In Advances in Abrasive Technology III 189–196, Soc. Grinding EngineersGoogle Scholar
  15. 15.
    Tso PL, Ho SY (2007) Factors influencing the dressing rate of chemical mechanical polishing pad conditioning. Int J Adv Manuf Technol 33:720–724CrossRefGoogle Scholar
  16. 16.
    Tso PL, Hsu R (2007) Estimating chemical mechanical polishing pad wear with compressibility. Int J Adv Manuf Technol 32:682–689CrossRefGoogle Scholar
  17. 17.
    Hu CC (2004) Modeling of chemical mechanical polishing. M.S. thesis, Dept. Mech. Eng., DEKALB ILLINOIS, USAGoogle Scholar
  18. 18.
    Tyan F (2007) Pad conditioning density distribution in CMP process with diamond dresser. IEEE Trans Semicond Manuf 20(4):464–475CrossRefGoogle Scholar
  19. 19.
    Liao YM, Yan HY, Wang FJ, Chen KS (2006) Mechanical properties characterization for CMP pads. 23rd National Conference of the Chinese Society of Mechanical Engineers, Tainan, TaiwanGoogle Scholar
  20. 20.
    Chen KS, Yeh HM, Yan JL, Chen YT (2009) Finite-element analysis on wafer-level CMP contact stress: reinvestigated issues and the effects of selected process parameters. Int J Adv Manuf Technol 42:1118–1130CrossRefGoogle Scholar
  21. 21.
    Yeh HM (2009) Development and applications of process emulators for MEMS and semiconductor fabrication processing. Ph.D. dissertation, Dept. Mech. Eng., National Cheng-Kung University, Tainan, TaiwanGoogle Scholar

Copyright information

© Springer-Verlag London Limited 2010

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringNational Cheng-Kung UniversityTainanRepublic of China
  2. 2.Center of Micro/Nano Science and TechnologyNational Cheng-Kung UniversityTainanRepublic of China

Personalised recommendations