Abstract
Silicon wafers are the most extensively used material for integrated circuit (IC) substrates. Before taking the form of a wafer, a single crystal silicon ingot must go through a series of machining processes, including slicing, lapping, surface grinding, edge profiling, and polishing. A key requirement of the processes is to produce extremely flat surfaces on work pieces up to 350 mm in diameter. A total thickness variation (TTV) of less than 15 μm is strictly demanded by the industry for an 0.18 μm IC process. Furthermore, the surfaces should be smooth (Ra<10 nm) and have minimum subsurface damage (<10 μm) before the final etching and polishing. The end product should have crack-free mirror surfaces with a micro-roughness less than 1.8 Å. In this paper, experiments are conducted to investigate the effects of various parameters on the subsurface damage of ground silicon wafers.
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Young, H., Liao, H. & Huang, H. Surface integrity of silicon wafers in ultra precision machining. Int J Adv Manuf Technol 29, 372–378 (2006). https://doi.org/10.1007/s00170-005-2508-1
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DOI: https://doi.org/10.1007/s00170-005-2508-1