Skip to main content
Log in

The upper bound of tool edge radius for nanoscale ductile mode cutting of silicon wafer

  • Original Article
  • Published:
The International Journal of Advanced Manufacturing Technology Aims and scope Submit manuscript

Abstract

For ductile mode cutting of brittle materials, such as silicon wafers, the undeformed chip thickness has to be smaller than the tool edge radius. In practical application, for high production rate, the undeformed chip thickness is expected to be as large as possible. Therefore, the tool edge radius is expected to be as large as possible. In this study, the upper bound of the tool edge radius is investigated through cutting experiments.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Blake PN, Scattergood RO (1990) Ductile-Regime Machining of Germanium and Silicon. J Am Ceram Soc 73 (4):949–957

    Article  CAS  Google Scholar 

  2. Nakasuji T, Kodera S, Hara S, Matsunaga H, Ikawa N, Shimada S (1990) Diamond turning of brittle materials for optical components. Ann CIRP 39 (1):89–92

    Google Scholar 

  3. Puttick KE, Whitmore LC, Chao CL, Gee AE (1994) Transmission electron microscopy of nanomachined silicon crystals. Philosoph Mag A 69(1):91–103

    CAS  ADS  Google Scholar 

  4. Lucca DA, Chou P, Hocken RJ (1998) Effect of tool edge geometry on the nanometric cutting of Ge. Ann CIRP 47 (1):475–478

    Google Scholar 

  5. Leung TP, Lee WB, Lu XM (1998) Diamond turning of silicon substrates in ductile-regime. J Mater Process Technol 73:42–48

    Article  Google Scholar 

  6. Chao CL, Ma KJ, Liu DS, Bai CY, Shy TL (2002) Ductile behavior in single-point diamond-turning of single-crystal silicon. J Mater Process Technol 127:187–190

    Article  CAS  Google Scholar 

  7. Liu K, Li XP (2001) Ductile cutting of tungsten carbide. J Mater Process Technol 113(1–3):348–354

    Article  CAS  Google Scholar 

  8. Liu K, Li XP, Rahman M, Neo KS, Chan CC, Liu XD (in press) A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers. Int J Adv Manuf Tech

  9. Blackley WS, Scattergood RO (1994) Chip topography for ductile-regime machining of germanium. ASME Trans, J Eng Ind 116:263–266

    Article  Google Scholar 

  10. Fang FZ, Venkatesh VC (1998) Diamond cutting of silicon with nanometric finish. Ann CIRP 47 (1):45–49

    Article  MathSciNet  Google Scholar 

  11. Shibata T, Fujii S, Makino E, Ikeda M (1996) Ductile-regime turning mechanism of single-crystal silicon. Prec Eng 18:129–137

    Article  Google Scholar 

  12. Liu K, Li XP (2001) Modeling of ductile cutting of tungsten carbide. Trans NAMRI/SME XXIX:251–258

    Google Scholar 

  13. Li XP, Rahman M, Liu K, Neo KS, Chan CC (2003) Nano-precision measurement of diamond tool edge radius for wafer fabrication. J Mater Process Technol 140:358–362

    Article  CAS  Google Scholar 

  14. Liu K, Li XP, Liang SY (in press) The mechanism of ductile chip formation in cutting of brittle materials. Int J Adv Manuf Technol

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to X. P. Li.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Arefin, S., Li, X.P., Rahman, M. et al. The upper bound of tool edge radius for nanoscale ductile mode cutting of silicon wafer. Int J Adv Manuf Technol 31, 655–662 (2007). https://doi.org/10.1007/s00170-005-0245-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00170-005-0245-0

Keywords

Navigation