Abstract
A novel ultra-wideband low-noise amplifier realized by a dual-resonance load network and a Cascode stage with bandwidth tuning capability is presented in this paper. Impedance matching at the input port is accomplished by a front end common gate stage along with a dual-resonance network. Ultra-wide bandwidth, consistent high-power gain and constant low noise figure throughout the desired frequency band is achieved due to the smart configuration of the proposed topology. Bandwidth tuning is obtained utilizing an analog voltage-controlled MOS Varactor. The proposed amplifier performance is verified by both 180 nm CMOS Technology post-layout simulations at Cadence Spectre Software and also measurement results which fortunately exhibit a good matching with each other. These analyses provide 14.5 ± 1 dB power gain, 3.8 ± 0.2 dB noise figure, and input impedance matching less than 10.8 dB. Meanwhile, the reverse isolation and output impedance matching is achieved at frequency band of 3–12 GHz to be − 76 dB and − 14 dB, respectively. The structure has a low-power consumption of 23mW.
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Yousefi, M., Seyyed Najjar Hoseini, S.M. & Monfaredi, K. Ultra-wideband Low-Noise Amplifier with Tunable Bandwidth. Circuits Syst Signal Process 42, 2557–2572 (2023). https://doi.org/10.1007/s00034-022-02249-3
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DOI: https://doi.org/10.1007/s00034-022-02249-3