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Analysis and Design of High Performance Analog Switch Circuit Based on 0.25 μm BCD Process

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Abstract

In this paper, a double-pole double-throw analog switch with n-channel architecture driven by a charge pump is described. The architecture proposed in this paper not only can reduce the on-resistance of the complementary metal oxide semiconductor (CMOS) switch, but also can realize a stable on-resistance within the full swing range of the input signal. This analog switch has the characteristics of high-speed, low-voltage, and high linearity, which is suitable for high-speed USB (Universal Serial Bus) 2.0 applications and meets low-speed and full-speed USB requirements. The test chip using a 0.25 μm BCD (bipolar–CMOS–DMOS) process confirms the characteristics of the switch. It uses + 2.8 to + 5.5 V single power supply, and the normal operating temperature range is − 40 to + 85 °C. This switch has an over-voltage protection function, which can prevent damage to the switch from the high input voltage. Besides, the switch port can realize dual-direction transmission. The analog switch designed in this paper solves some problems of traditional analog switches, such as large on-resistance, large supply current, and large parasitic capacitance. The on-resistance of the analog switch architecture in this paper is 5 Ω and the on-resistance flatness is 0.1 Ω. The supply current is as low as 0.87 μA while the whole chip area is 0.65 mm2.

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Acknowledgements

This work is supported by the National Natural Science Foundation of China (Grant Nos. 61774129, 61827812, 61704145), Hunan Science and Technology Department Huxiang High-level Talent Gathering Project (Grant No. 2019RS1037), and Hunan Province Scientific and Technological Breakthrough of Strategic Emerging Industries and Transformation Projects (Grant Nos. 2020GK2018, 2019GK4016, 2020RC1003).

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Xiangtan University, Xiangtan, 411105, Hunan, China

    Duocai Peng & Xiangliang Jin

  2. Department of Electronic Science and Technology, Hunan Normal University, Changsha, 200444, China

    Xiangliang Jin

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  1. Duocai Peng
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Peng, D., Jin, X. Analysis and Design of High Performance Analog Switch Circuit Based on 0.25 μm BCD Process. Circuits Syst Signal Process 42, 1893–1910 (2023). https://doi.org/10.1007/s00034-022-02206-0

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