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Complementary Current-Reused 3.7–11.9 GHz LNA Using Body-Floating and Self-Bias Technique for Sub-6 GHz 5G Communications

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Abstract

In this work, we report a single-voltage-supply-operated current-reused complementary 3.7–11.9 GHz CMOS low-noise amplifier (LNA) for sub-6 GHz 5G systems. The body-floating and self-forward-bias technique, i.e., the body of the transistor is connected to its drain through a large resistance (7.7 or 11.5 k \(\Omega\) in this work), is applied to the nMOS and the pMOS transistors. An auxiliary path is included in the input stage for better noise cancelling. An enhancement in S21 and noise figure (NF) is achieved due to the forward body-to-source bias (VBS) (i.e., small n/pMOS threshold voltage Vth,n/Vth,p) and the transistors being free from the substrate leakage. Low power is achieved since low supply voltage (VDD) of 1.2 V is applicable because of small Vth. An enhancement in bandwidth of the LNA is achieved due to the peaking inductors Lg1, Lg2, and Ld. The LNA consumes 7.3 mW and achieves prominent S21 of 8.1 ± 1.5 dB, NF of 3.02–5.2 dB, and IIP3 of 0.3 ~ − 1.3 dBm for 3.7–11.9 GHz. The chip area of the LNA is 0.34 mm2.

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Acknowledgements

This work was supported by the Ministry of Science and Technology (MOST) of Taiwan, Republic of China, under Contract most109-2222-e-035-009. The authors are grateful for the support from TSRI for chip fabrication and measurements.

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Authors and Affiliations

  1. Department of Electronic Engineering, National Changhua University of Education, 500, Chunghua, Taiwan

    Jin-Fa Chang

  2. Department of Electrical Engineering, National Chi Nan University, 545, Puli, Taiwan

    Yo-Sheng Lin

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  1. Jin-Fa Chang
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  2. Yo-Sheng Lin
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Chang, JF., Lin, YS. Complementary Current-Reused 3.7–11.9 GHz LNA Using Body-Floating and Self-Bias Technique for Sub-6 GHz 5G Communications. Circuits Syst Signal Process 41, 5968–5989 (2022). https://doi.org/10.1007/s00034-022-02077-5

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