Circuits, Systems, and Signal Processing

, Volume 35, Issue 5, pp 1531–1543 | Cite as

A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

  • Xiao Peng YuEmail author
  • Wen Lin Xu
  • Chen Feng
  • Zheng Hao Lu
  • Wei Meng Lim
  • Kiat Seng Yeo


In this paper, a wideband low noise amplifier (LNA) for 60 GHz wireless applications is presented. A single-ended two-stage cascade topology is utilized to realize an ultra-wideband and flat gain response. The first stage adopts a current-reused topology that performs the more than 10 GHz ultra-wideband input impedance matching. The second stage is a cascade common source amplifier that is used to enhance the overall gain and reverse isolation. By proper optimization of the current-reused topology and stagger turning technique, the two-stage cascade common source LNA provides low power consumption and gain flatness over an ultra-wide frequency band with relatively low noise. The LNA is fabricated in Global Foundries 65 nm RFCMOS technology. The measurement results show a maximum \(S_{21}\) gain of 11.4 dB gain with a \(-\)3 dB bandwidth from 48 to 62 GHz. Within this frequency range, the measured \(S_{11}\) and \(S_{12}\) are less than \(-\)10 dB and the measured DC power consumption is only 11.2 mW from a single 1.5 V supply.


Low noise amplifier Low power Millimeter wave Nano-scale CMOS Ultra-wideband 



This work was supported by National Science Foundation China (Grant No. 61274034) and Natural Science Foundation of Jiangsu Province of China under Grant No. BK2012644 and the ZJU-SUTD Joint research project under the Fundamental Research Funds for the Central Universities (No. 2015XZZX001-01).


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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Xiao Peng Yu
    • 1
    Email author
  • Wen Lin Xu
    • 1
  • Chen Feng
    • 1
  • Zheng Hao Lu
    • 2
  • Wei Meng Lim
    • 2
  • Kiat Seng Yeo
    • 3
  1. 1.Institute of VLSI DesignZhejiang UniversityHangzhouPeople’s Republic of China
  2. 2.School of EEENanyang Technological UniversitySingaporeSingapore
  3. 3.Singapore University of Technology and DesignSingaporeSingapore

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