Skip to main content
Log in

On Inverse Problems for Semiconductor Equations

  • Original Paper
  • Published:
Milan Journal of Mathematics Aims and scope Submit manuscript

Abstract.

This paper is devoted to the investigation of inverse problems related to stationary drift-diffusion equations modeling semiconductor devices. In this context we analyze several identification problems corresponding to different types of measurements, where the parameter to be reconstructed is an inhomogeneity in the PDE model (doping profile). For a particular type of measurement (related to the voltage-current map) we consider special cases of drift-diffusion equations, where the inverse problems reduces to a classical inverse conductivity problem. A numerical experiment is presented for one of these special situations (linearized unipolar case).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to M. Burger.

Additional information

Lecture held by P.A. Markowich in the Seminario Matematico e Fisico on April 5, 2004

Received: June, 2004

Rights and permissions

Reprints and permissions

About this article

Cite this article

Burger, M., Engl, H.W., Leitao, A. et al. On Inverse Problems for Semiconductor Equations. Milan j. math. 72, 273–313 (2004). https://doi.org/10.1007/s00032-004-0025-6

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00032-004-0025-6

Keywords

Navigation