Abstract
The study of single slip was performed by imitation simulation and mathematical simulation methods. In a modified barrier model of constant linear tension, all stages of the process of nucleation and propagation of single crystallographic slip to the field of discrete dislocation obstacles have been simulated and investigated. The equation of dynamics of expansion of an isolated closed planar dislocation loop, which restricts slipping, was used to perform a comparative study of the effect of the mechanisms of resistance to dislocation motion on the characteristics of the resulting single slip. Micromechanical characteristics of each dislocation loop emitted by a dislocation source after loss of stability have been calculated. The time it takes for single slip to propagate up to the barrier configurations that restrict slipping and the total formative time of the crystallographic shear zone have been estimated.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 57–68, January, 2006.
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Popov, L.E., Slobodskoi, M.I. & Kolupaeva, S.N. Simulation of single slip in FCC metals. Russ Phys J 49, 62–73 (2006). https://doi.org/10.1007/s00000-006-0070-8
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DOI: https://doi.org/10.1007/s00000-006-0070-8