The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH4 or SiH2Cl2 on Si(100)-(2×1)
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and SiH2Cl2 at intermediate temperatures is illustrated. Under these conditions multilayer growth is governed by heterogeneous nucleation of dimer strings at antiphase domain boundaries of the underlying layer which represent deep potential minima for diffusing species. This is in contrast to the formation of the first epitaxial layer, which nucleates homogeneously on the flat substrate terraces.
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