Applied Physics A

, Volume 66, Supplement 1, pp 1025–1029 | Cite as

The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH4 or SiH2Cl2 on Si(100)-(2×1)

  • J. Spitzmüller
  • M. Fehrenbacher
  • F. Haug
  • H. Rauscher
  • R.J. Behm
Regular paper
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4

and SiH2Cl2 at intermediate temperatures is illustrated. Under these conditions multilayer growth is governed by heterogeneous nucleation of dimer strings at antiphase domain boundaries of the underlying layer which represent deep potential minima for diffusing species. This is in contrast to the formation of the first epitaxial layer, which nucleates homogeneously on the flat substrate terraces.

PACS: 68.35.Bs; 68.35.Dv; 81.15.Gh 

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Copyright information

© Springer-Verlag 1998

Authors and Affiliations

  • J. Spitzmüller
    • 1
  • M. Fehrenbacher
    • 1
  • F. Haug
    • 1
  • H. Rauscher
    • 1
  • R.J. Behm
    • 1
  1. 1.Abt. Oberflächenchemie und Katalyse, Universität Ulm, 89069 Ulm, GermanyDE

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