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Origin of yellow luminescence from reduced pressure grown bulk GaN crystals

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Abstract.

Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed

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Authors and Affiliations

  1. Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, 28040 Madrid, Spain, , , , , , ES

    M. Herrera-Zaldívar, P. Fernández & J. Piqueras

  2. A.F.Ioffe Physical-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya, 194021 St.Petersburg, Russia, , , , , , RU

    V.V. Sukhoveyev, V.A. Ivantsov & Y.G. Shreter

Authors
  1. M. Herrera-Zaldívar
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  2. P. Fernández
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  3. J. Piqueras
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  4. V.V. Sukhoveyev
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  5. V.A. Ivantsov
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  6. Y.G. Shreter
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Additional information

Received: 15 April 1999 / Revised version: 20 December 1999 / Accepted: 28 March 2000 / Published online: 7 June 2000

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Herrera-Zaldívar, M., Fernández, P., Piqueras, J. et al. Origin of yellow luminescence from reduced pressure grown bulk GaN crystals . Appl Phys A 71, 55–58 (2000). https://doi.org/10.1007/PL00021091

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  • DOI: https://doi.org/10.1007/PL00021091

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