Abstract.
We report the growth of thin tantalum pentoxide films on Si (100) by ultraviolet-assisted injection liquid source (UVILS) chemical vapor deposition (CVD) at low temperatures (200–350 °C). This new technique combines the intense radiation from an excimer lamp (λ=222 nm) with a novel injection liquid source capable of delivering precisely controllable quantities of a liquid metalorganic precursor into the CVD chamber. The composition and optical properties of the oxides were determined using a variety of standard characterization methods. After optimization of the deposition parameters, the best layers were incorporated into simple MOS test structures to enable electrical characterization. Refractive index values of 2.09±0.07, fixed oxide charge content of <5×1010 cm-2, breakdown fields higher than 2 MV/cm and dielectric constant values of 18–24 were readily achievable in the as-deposited films. These properties compare favorably with those for layers prepared by conventional thermal-CVD at significantly higher temperatures of 500 °C.
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Received: 6 December 1999 / Accepted: 7 January 2000 / Published online: 11 May 2000
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Zhang, JY., Boyd, I., Mooney, M. et al. Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source . Appl Phys A 70, 647–649 (2000). https://doi.org/10.1007/PL00021075
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DOI: https://doi.org/10.1007/PL00021075