Abstract
The effect of temperature on the fracture strength and work of fracture of a self-bonded SiC has been measured from room temperature to 1100° C. Over the same temperature range the work of fracture was observed to increase twofold. These phenomena were accounted for in terms of the behaviour of the free-silicon phase. In addition, electron microscopy of the fractured surface was undertaken. Fracture chips showed that dislocations were generated during the failure process in both the secondary SiC and silicon phases. Stacking faults were observed in the SiC phases, and some of these were shown to have formed during the fracture process.
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Stevens, R. Temperature dependence of fracture effects in self-bonded SiC. J Mater Sci 6, 324–331 (1971). https://doi.org/10.1007/PL00020375
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DOI: https://doi.org/10.1007/PL00020375