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Depth profile analysis of minor elements by GD-OES: Applications to diffusion phenomena

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Abstract.

 Depth distributions of minor elements in systems in which diffusion takes place are discussed together with the methods of determinating these distributions by GD-OES depth profiling. The quantification method is illustrated using as example Si, Fe, Zn and Sn diffusion/segregation phenomena in a Ti-thin-film/Al-substrate system with an Al3Ti interface diffusion layer grown at elevated temperatures.

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Authors and Affiliations

  1. LECO Instrumente Plzen˘, s.r.o., alej Svobody 56, 323 18 Plzen˘, Czech Republic , , , , ,

    Zdene˘k Weiss

  2. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 180 40 Prague 8, Czech Republic , , , , ,

    Jindr˘ich Musil

  3. Department of Physics, University of West Bohemia, Americká 42, 306 14 Plzen˘, Czech Republic, , , , ,

    Jaroslav Vlc˘ek

Authors
  1. Zdene˘k Weiss
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  2. Jindr˘ich Musil
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  3. Jaroslav Vlc˘ek
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Received: 15 October 1994 / Revised: 16 February 1995 / Accepted: 17 March 1995

Correspondence to: Z. Weiss

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Weiss, Z., Musil, J. & Vlc˘ek, J. Depth profile analysis of minor elements by GD-OES: Applications to diffusion phenomena. Fresenius J Anal Chem 354, 188–192 (1996). https://doi.org/10.1007/PL00012709

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  • DOI: https://doi.org/10.1007/PL00012709

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