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Output Power of a Semiconductor Laser in an External Cavity

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Abstract

We present the processing procedure for obtaining efficient silicon nitride anti-reflection coating on semiconductor laser facet. Fabrication of an external cavity laser using a commer¬cially available semiconductor laser has been demonstrated. The output power of an exter¬nal cavity semiconductor laser has been studied experimentally for different feedback levels.

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Authors and Affiliations

  1. Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, 560012, India

    G. M. Hegde, Anand V. Ramamurthi, Shyam Kumar Das & A. Selvarajan

Authors
  1. G. M. Hegde
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  2. Anand V. Ramamurthi
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  3. Shyam Kumar Das
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  4. A. Selvarajan
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Correspondence to G. M. Hegde.

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Hegde, G.M., Ramamurthi, A.V., Das, S.K. et al. Output Power of a Semiconductor Laser in an External Cavity. J Opt 27, 179–184 (1998). https://doi.org/10.1007/BF03549345

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  • DOI: https://doi.org/10.1007/BF03549345

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