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Formation and Behavior of Subboundaries in Silicon Iron Crystals

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References

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Authors and Affiliations

  1. General Electric Co., Pittsfield, Mass., USA

    C. G. Dunn (Member AIME, is Research Physicist) & F. W. Daniels (Metallurgist)

Authors
  1. C. G. Dunn
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  2. F. W. Daniels
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Additional information

Discussion of this paper, TP 3005 E, may be sent (2 copies) to AIME by April 1, 1951. Manuscript, Oct. 9, 1950. St. Louis Meeting, February 1951.

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Dunn, C.G., Daniels, F.W. Formation and Behavior of Subboundaries in Silicon Iron Crystals. JOM 3, 147–154 (1951). https://doi.org/10.1007/BF03397291

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