Abstract
As a part of a continuing program on the application of electron beams to microelectronics, the role of beam-induced structural modifications and transformations is being assessed. Using a 3-pct-Si iron model system, microstructural evidence of unusual grain growth character and rapid grain boundary movement was found. Comparison with grain growth and grain boundary movement as determined by traditional techniques suggests a much higher degree of atomic mobility in the electron beam-induced case than is characterized by normal solid-state diffusion. The implications of such recrystallization and grain growth behavior are discussed.
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Medoff, J.I., Miller, A. Electron Beam Induced Recrystallization. JOM 14, 764–769 (1962). https://doi.org/10.1007/BF03378192
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DOI: https://doi.org/10.1007/BF03378192