Skip to main content
SpringerLink
Log in

Removal of Boron from Silicon by Hydrogen Water Vapor Treatment

  • Published:
JOM Aims and scope Submit manuscript

Abstract

Boron may be removed from liquid silicon by treatment with hydrogen containing water vapor. Use of thft method coupled with zone refining makes it possible to prepare higher purity silicon than is otherwise possible.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. G. Pfann: AIME Trans., 1952, vol. 194, p. 747; Journal of Metals, July 1952.

    Google Scholar 

  2. P. Keck and M. Golay: Physical Review, 1953, vol. 89, p. 1297.

    Article  Google Scholar 

  3. R. Emeis: Ztsch. für Naturforschung, 1954, vol. 9a, p. 67.

    Google Scholar 

  4. W. G. Pfann: AIME Trans., 1953, vol. 197, p. 1441; Journal of Metals, November 1953.

    Google Scholar 

  5. F. J. Morin and J. P. Maita: Physical Review, 1954, vol. 96, p. 28.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Bell Telephone Laboratories Inc., Murray Hill, N. J., USA

    H. C. Theuerer

Authors
  1. H. C. Theuerer
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

TP 4325E. Manuscript, Jan. 12, 1956. New York Meeting, February 1956.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Theuerer, H.C. Removal of Boron from Silicon by Hydrogen Water Vapor Treatment. JOM 8, 1316–1319 (1956). https://doi.org/10.1007/BF03377873

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03377873

Search

Navigation