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Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
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  • Article
  • Open Access
  • Published: 01 July 2014

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

  • Jingqi Li1,
  • Weisheng Yue1,
  • Zaibing Guo1,
  • Yang Yang1,
  • Xianbin Wang1,
  • Ahad A. Syed1 &
  • …
  • Yafei Zhang2 

Nano-Micro Letters volume 6, pages 287–292 (2014)Cite this article

  • 668 Accesses

  • 3 Citations

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Abstract

A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

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References

  1. R. H. Dennard, F. H. Gaensslen, H.-N. Yu, V. L. Rideout, E. Bassous and A. R. LeBlance, “Design of ion-implanted MOSFET’s with very small physical dimensions”, IEEE J. Solid-State Circuits 9(5), 256–268 (1974). http://dx.doi.org/10.1109/JSSC.1974.1050511

    Article  Google Scholar 

  2. M. Ieong, B. Doris, J. kedzierski, K. Rim and M. Yang, “Silicon device scaling to the sub-10-nm regime”, Science 306(5704), 2057–2060 (2004). http://dx.doi.org/10.1126/science.1100731

    Article  Google Scholar 

  3. Ph. Avouris, “Carbon nanotube electronics and photonics”, Phys. Today 62(1), 34–40 (2009). http://dx.doi.org/10.1063/1.3074261

    Article  Google Scholar 

  4. Min Zhang, “Improving the Electrical Contact Property of Single-Walled Carbon Nanotube Ar-rays by Electrodeposition”, Nano-Micro Lett. 5(4), 242–246 (2013). http://dx.doi.org/10.5101/nml.v5i4.p242-246

    Article  Google Scholar 

  5. Q. Cao and S.-J. Han, “Single-walled carbon nanotubes for high-performance electronics”, Nanoscale 5(19), 8852–8863 (2013). http://dx.doi.org/10.1039/c3nr02966b

    Article  Google Scholar 

  6. A. D. Franklin, M. Luisier, S.-J. Han, G. Tulevski, C. M. Breslin, L. Gignac, M. S. Lundstrom and W. Haensch, “Sub-10 nm carbon nanotube transistor”, Nano Lett. 12(2), 758–762 (2012). http://dx.doi.org/10.1021/nl203701g

    Article  Google Scholar 

  7. F. Kreupl, “Carbon nanotubes finally deliver”, Nature 484, 321-322 (2012). http://dx.doi.org/10.1038/484321a

    Google Scholar 

  8. J. Li, C. Zhao, Q. Wang, Q. Zhang, Z. Wang, X. Zhang, A. I. Abutaha and H. N. Alshareef, “Vertically aligned carbon nanotube field-effect transistors”, Carbon 50(12), 4628–4632 (2012). http://dx.doi.org/10.1016/j.carbon.2012.05.049

    Article  Google Scholar 

  9. J. Li, Q. Wang, W. Yue, Z. Guo, L. Li, C. Zhao, X. Wang, A. I. Abutaha, H. N. Alshareef, Y. Zhang and X. Zhang, “Integrating carbon nanotubes to Si by means of vertical carbon nanotube field-effect transistors”, Nanoscale, accept. http://dx.doi.org/10.1039/C4NR00978A

  10. J. Mores, “Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface”, Appl. Phys. A 87(3), 531–537 (2007). http://dx.doi.org/10.1007/s00339-007-3986-9

    Article  Google Scholar 

  11. N. Rouhi, D. Jain, K. Zand and P. J. Burke, “Fundamental limits on the mobility of nanotube-based semiconducting inks”, Adv. Mater. 23(1), 94–99 (2011). http://dx.doi.org/10.1002/adma.201003281

    Article  Google Scholar 

  12. M. Engel, J. P. Small, M. Steiner, M. Freitag, A. A. Green, M. C. Hersam and Ph. Avouris, “Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays”, ACS Nano 2(12), 2445–2452 (2008). http://dx.doi.org/10.1021/nn800708w

    Article  Google Scholar 

  13. S. Heinze, M. Radosavljevic, J. Tersoff and Ph. Avouris, “Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors”, Phys. Rev. B 68, 235418 (2003). http://dx.doi.org/10.1103/PhysRevB.68.235418

  14. S. Heinze, J. Tersoff and Ph. Avouris, “Electrostatic engineering of nanotube transistors for improved performance”, Appl. Phys. Lett. 83(24), 5038–5040 (2003). http://dx.doi.org/10.1063/1.1632531

    Article  Google Scholar 

  15. J. Li, Q. Zhang and M. B. Chan-Park, “Simulation of carbon nanotube based p-n junction diodes”, Carbon 44(14), 3087–3090 (2006). http://dx.doi.org/10.1016/j.carbon.2006.04.041

    Article  Google Scholar 

  16. J. Li, Y. C. Cheng, Z. B. Guo, Z. H. Wang, Z. Y. Zhu, Q. Zhang, M. B. Chan-Park, U. Schwingenschlögl and X. X. Zhang, “Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors”, Nanoscale 5(6), 2476–2481 (2013). http://dx.doi.org/10.1039/c3nr33263b

    Article  Google Scholar 

  17. W. Zhang, C. Chen and Y. Zhang, “Modeling of carbon nanotube field-effect transistor with nanowelding treatment”, Microelectron. J. 40(12), 1681–1685 (2009). http://dx.doi.org/10.1016/j.mejo.2009.08.002

    Article  Google Scholar 

  18. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller and Ph. Avouris, “Carbon nanotubes as Schottky barrier transistors”, Phys. Rev. Lett. 89, 106801 (2002). http://dx.doi.org/10.1103/PhysRevLett.89.106801

    Article  Google Scholar 

  19. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, “Ballistic carbon nanotube field-effect transistors”, Nature 424(7), 654–657 (2003). http://dx.doi.org/10.1038/nature01797

    Article  Google Scholar 

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Authors and Affiliations

  1. Nanofab, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia

    Jingqi Li, Weisheng Yue, Zaibing Guo, Yang Yang, Xianbin Wang & Ahad A. Syed

  2. Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. China

    Yafei Zhang

Authors
  1. Jingqi Li
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  2. Weisheng Yue
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  4. Yang Yang
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  5. Xianbin Wang
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  6. Ahad A. Syed
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  7. Yafei Zhang
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Corresponding authors

Correspondence to Jingqi Li or Yafei Zhang.

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Cite this article

Li, J., Yue, W., Guo, Z. et al. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon. Nano-Micro Lett. 6, 287–292 (2014). https://doi.org/10.1007/BF03353793

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  • Received: 03 April 2014

  • Accepted: 05 May 2014

  • Published: 01 July 2014

  • Issue Date: July 2014

  • DOI: https://doi.org/10.1007/BF03353793

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Keywords

  • Field-effect transistors
  • Semi-classical simulation
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