Nano-Micro Letters

, Volume 3, Issue 3, pp 146–152 | Cite as

Alignment of Nanoscale Single-Walled Carbon Nanotubes Strands

  • Danna Yang
  • Lin Wang
  • Xiaoxian Zhang
  • Dongwei Wang
  • Zhiqiang Shen
  • Sai Li
Open Access
Article

Abstract

Depositing single-walled carbon nanotubes (SWNTs) with controllable density, pattern and orientation on electrodes presents a challenge in today’s research. Here, we report a novel solvent evaporation method to align SWNTs in patterns havingnanoscale width and micronscale length. SWNTs suspension has been introduced dropwise onto photoresist resin microchannels; and the capillary force can stretch and align SWNTs into strands with nanoscale width in the microchannels. Then these narrow and long aligned SWNTs patterns were successfully transferred to a pair of gold electrodes with different gaps to fabricate carbon nanotube field-effect transistor (CNTFET). Moreover, the electrical performance of the CNTFET show that the SWNTs strands can bridge different gaps and fabricate good electrical performance CNTFET with ON/OFF ratio around 106. This result suggests a promising and simple strategy for assembling well-aligned SWNTs into CNTFET device with good electrical performance.

Keywords

Single-walled carbon nanotubes Microchannel Capillary force Carbon nanotube field effect transistor 

References References

  1. [1]
    S. Iijima and T. Ichihashi, Nature 363, 603 (1993). http://dx.doi.org/10.1038/363603a0CrossRefGoogle Scholar
  2. [2]
    D. S. Bethune, C. H. Klang, M. S. d. Vries, G. Gorman, R. Savoy, J. Vazquez and R. Beyers, Nature 363, 605 (1993). http://dx.doi.org/10.1038/363605a0CrossRefGoogle Scholar
  3. [3]
    P. Avouris and R. Martel, Mrs. Bulletin. 35, 306 (2010). http://dx.doi.org/10.1557/mrs2010.553CrossRefGoogle Scholar
  4. [4]
    P. Sharma and P. Ahuja, Mater. Res. Bull. 43, 2517 (2008). http://dx.doi.org/10.1016/j.materresbull.2007.10.012CrossRefGoogle Scholar
  5. [5]
    P. Avouris, R. Martel, V. Derycke and J. Appenzeller, Physica. B. 323, 6 (2002). http://dx.doi.org/10.1016/S0921-4526(02)00870-0CrossRefGoogle Scholar
  6. [6]
    Martin-Fernandez, M. Sansa, M. J. Esplandiu and P. Godignon, Microelectron. Eng. 87, 1554 (2010). http://dx.doi.org/10.1016/j.mee.2009.11.026CrossRefGoogle Scholar
  7. [7]
    H. W. C. Postma, T. Teepen, Z. Yao, M. Grifoni and C. Dekker, Science 293, 76 (2001). http://dx.doi.org/10.1126/science.1061797CrossRefGoogle Scholar
  8. [8]
    T. Druzhinina, S. Hoeppener and U. S. Schubert, Adv. Mater. 23, 953 (2011). http://dx.doi.org/10.1002/adma.201003509CrossRefGoogle Scholar
  9. [9]
    S. Han, X. L. Liu and C. W. Zhou, J. Am. Chem. Soc. 127, 5294 (2005). http://dx.doi.org/10.1021/ja042544xCrossRefGoogle Scholar
  10. [10]
    B. Q. Wei, R. Vajtai, Y. Jung, J. Ward, R. Zhang, G. Ramanath and P. M. Ajayan, Nature 416, 495 (2002). http://dx.doi.org/10.1038/416495aCrossRefGoogle Scholar
  11. [11]
    W. Salalha and E. Zussman, Phys. Fluids. 17, 063301 (2005). http://dx.doi.org/10.1063/1.1925047CrossRefGoogle Scholar
  12. [12]
    J. S. Shim, Y. H. Yun, W. Cho, V. Shanov, M. J. Schulz and C. H. Ahn, Langmuir 26, 11642 (2010). http://dx.doi.org/10.1021/la101079bCrossRefGoogle Scholar
  13. [13]
    X. L. Li, L. Zhang, X. R. Wang, I. Shimoyama, X. M. Sun, W. S. Seo and H. J. Dai, J. Am. Chem. Soc. 129, 4890 (2007). http://dx.doi.org/10.1021/ja071114eCrossRefGoogle Scholar
  14. [14]
    J. S. Shim, Y. H. Yun, M. J. Rust, J. Do, V. Shanov, M. J. Schulz and C. H. Ahn, Nanotechnology 20, 325607 (2009). http://dx.doi.org/10.1088/0957-4484/20/32/325607CrossRefGoogle Scholar
  15. [15]
    C. X. Chen, Z. Y. Hou, X. Liu, J. P. Miao and Y. F. Zhang, Appl. Phys. Lett. 366, 474 (2007). http://dx.doi.org/10.1016/j.physleta.2007.02.089CrossRefGoogle Scholar
  16. [16]
    P. Avouris, M. Engel, J. P. Small, M. Steiner, M. Freitag, A. A. Green and M. C. Hersam, Acs. Nano. 2, 2445 (2008). http://dx.doi.org/10.1021/nn800708wCrossRefGoogle Scholar
  17. [17]
    J. Xu, J. F. Xia, S. W. Hong, Z. Q. Lin, F. Qiu and Y. L. Yang, Phys. Rev. Lett. 96, 66104 (2006). http://dx.doi.org/10.1103/PhysRevLett.96.066104CrossRefGoogle Scholar
  18. [18]
    L. V. Govor, G. Reiter, G. H. Bauer and J. Parisi, Appl. Phys. Lett. 84, 4774 (2004). http://dx.doi.org/10.1063/1.1759378CrossRefGoogle Scholar
  19. [19]
    C. A. P. Petit and J. D. Carbeck, Nano. Lett. 3, 1141 (2003). http://dx.doi.org/10.1021/nl034341xCrossRefGoogle Scholar
  20. [20]
    H. Ko, S. Peleshanko and V. V. Tsukruk, J. Phys. Chem. B. 108, 4385 (2004). http://dx.doi.org/10.1021/jp031229eCrossRefGoogle Scholar
  21. [21]
    J. U. Park, M. A. Meitl, S. H. Hur, M. L. Usrey, M. S. Strano, P. J. A. Kenis and J. A. Rogers, Angew. Chem. Int. Edit. 45, 581 (2006). http://dx.doi.org/10.1002/anie.200501799CrossRefGoogle Scholar
  22. [22]
    S. Li, Y. Yan, N. Liu, M. B. Chan-Park and Q. Zhang, Small 3, 616 (2007). http://dx.doi.org/10.1002/smll.200600525CrossRefGoogle Scholar
  23. [23]
    J. Q. Li and Q. Zhang, Nanotechnology 16, 1415 (2005). http://dx.doi.org/10.1088/0957-4484/16/8/074CrossRefGoogle Scholar
  24. [24]
    F. S. Kim, C. Q. Ren and S. A. Jenekhe, Chem. Mater. 23, 682 (2011). http://dx.doi.org/10.1021/cm102772xCrossRefGoogle Scholar
  25. [25]
    C. Wang, A. Badmaev, A. Jooyaie, M. Bao, K. L. Wang, K. Galatsis and C. W. Zhou, Acs. Nano. 5, 4169 (2011). http://dx.doi.org/10.1021/nn200919vCrossRefGoogle Scholar
  26. [26]
    M. T. Martinez, Y. C. Tseng, J. P. Salvador and M. P. Marco, Acs. Nano. 4, 1473 (2010). http://dx.doi.org/10.1021/nn901547bCrossRefGoogle Scholar
  27. [27]
    J. M. Schnorr and T. M. Swager, Chem. Mater. 23, 646 (2011). http://dx.doi.org/10.1021/cm102406hCrossRefGoogle Scholar

Copyright information

© Shanghai Jiao Tong University (SJTU) Press 2011

Authors and Affiliations

  • Danna Yang
    • 1
  • Lin Wang
    • 1
  • Xiaoxian Zhang
    • 1
  • Dongwei Wang
    • 1
  • Zhiqiang Shen
    • 2
  • Sai Li
    • 1
  1. 1.School of Chemical EngineeringSichuan UniversityChengduChina
  2. 2.Academy of Military Medical sciencesChinese PLA Center for Disease Control & PreventionTianjinChina

Personalised recommendations