Abstract
The effects of the pressure of ambient gas and sample temperature on photo-acoustic displacement (PAD) were studied quantitatively using an extremely sensitive laser interferometric probe. For silicon, the PAD signal measured at atmospheric pressure increased by about 18% as compared to that obtained in a vacuum, and varied by less than 0.7% for a change in pressure of 5% around 1 atm. This effect was attributed to the decrease in refractive index of the gas adjacent to the sample. Temperature rise caused PAD to increase proportionally, and for GaAs, PAD varied 0.4% per degree. The variation of PAD with temperature was accurately explained by the temperature dependence of thermal expansion coefficient and thermal conductivity of the sample.
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Sumie, S., Takamatsu, H. Effects of ambient gas and temperature on photo-acoustic displacement for semiconductors. Optical Review 1, 299–303 (1994). https://doi.org/10.1007/BF03254891
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DOI: https://doi.org/10.1007/BF03254891