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Growing GaN by plasma-assisted molecular-beam epitaxy

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Abstract

The III–V compounds GaN and AlN have a variety of interesting properties that would prove useful in new applications. This article describes work aimed at the successful epitaxial growth of GaN on silicon substrates and details some of the novel applications that could be the result of such work.

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Authors and Affiliations

  1. Brown University, USA

    Roderic Beresford Ph.D. (assistant professor)

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  1. Roderic Beresford Ph.D.
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Beresford, R. Growing GaN by plasma-assisted molecular-beam epitaxy. JOM 46, 54–58 (1994). https://doi.org/10.1007/BF03220653

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  • DOI: https://doi.org/10.1007/BF03220653

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