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Dislocations in strained layers: The Ge-Si system

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Abstract

The Ge-Si on Si epilayer system, besides being an interesting technological system in its own right, is a superb model for strained-layer studies. The point defect and symmetry defect structures associated with compound semiconductors can be avoided, allowing a focus on the mechanics of the system. Dislocation sources, glide behavior, and performance effects have been examined for strained-layer systems. Surprises have appeared along the way, but these materials are now becoming characterized well enough for industrial device applications.

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References

  1. J.C. Bean, J. Vac. Sci. Tech., B4 (1986), p. 1427.

    Google Scholar 

  2. T.P. Pearsal l et al., Phys. Rev. Lett., 58 (1987), p. 729.

    CAS  Google Scholar 

  3. E. Kasper, Adv. in Solid State Physics, 27 (1987), p. 265.

    CAS  Google Scholar 

  4. S.F. Nelson et al. Appl. Phys. Lett., 63(6) (1993), p. 794.

    CAS  Google Scholar 

  5. D. Monroe, et al., J. Vac. Sci. Tech., Bll(4) (1993), p. 1731.

    Google Scholar 

  6. W. A. Jesser, J.W. Matthews, and D. Kuhlmann-Wilsdorf, J. Vac. Sci. Tech., 2 (1965), p. 276.

    Google Scholar 

  7. J.W. Matthews, Phil. Mag., 13 (1966), p. 1207.

    CAS  Google Scholar 

  8. J.W. Matthews, S. Mader, and T.B. Light, J. Appl. Phys., 41 (1970), p. 3800.

    CAS  Google Scholar 

  9. J.W. Matthews and A.E. Blakeslee, J. Crystal Gr., 32 (1974), p. 265.

    Google Scholar 

  10. J.H. van der Merwe, Phil. Mag., 7(80) (1962), p. 1433.

    CAS  Google Scholar 

  11. J.H. van der Merwe, J. Appl. Phys., 34(1) (1963), p. 123.

    CAS  Google Scholar 

  12. W. A. Jesser and J.H. van der Merwe, Dislocations in Solids, ed J.W. Matthews (Amsterdam, the Netherlands: North Holland, 1989), p. 421.

    Google Scholar 

  13. J.R. Willis, S.C. Jain, and R. Bullough, Phil. Mag., A62(1) (1990), p. 115.

    Google Scholar 

  14. R. Hull and J.C. Bean, Critical Reviews in Solid State and materials Sciences, 17 (1992), p. 507.

    CAS  Google Scholar 

  15. J.H. van der Merwe, Critical Reviews in Solid State and materials Sciences, 17 (1991), p. 187.

    CAS  Google Scholar 

  16. W. Hagen and H. Strunk, Appl. Phys., 17 (1978), p. 85.

    CAS  Google Scholar 

  17. D.J. Eaglesham et al., Phil. Mag., A59 (1989), p. 1059.

    Google Scholar 

  18. W.D. Nix, D.B. Noble and J.F. Turlo, Thin Films: Stresses and Mechanical Properties II (Pittsburgh, PA: MRS, 1990), p.315.

    Google Scholar 

  19. S.S. Iyer and F.K. LeGoues, J. Appl. Phys., 65 (1989), p. 4693.

    CAS  Google Scholar 

  20. J. Washburn and E.P. Kvam, Appl. Phys. Lett, 57(16) (1990), p. 1637.

    CAS  Google Scholar 

  21. A. Lefebvre, et al., Phil. Mag. Lett., 63(1) (1991), p. 23.

    CAS  Google Scholar 

  22. R. Beanland, Appl. Phys. Lett., 72 (9) (1992), p. 4031.

    CAS  Google Scholar 

  23. C.G. Tuppen et al, Appl. Phys. Lett., 56 (1) (1990), p. 54.

    Google Scholar 

  24. F.K. LeGoues et al., Appl. Phys. Lett., 61 (2) (1992), p. 174.

    Google Scholar 

  25. B.W. Dodson, Appl. Phys. Lett., 53 (1988), p. 394.

    Google Scholar 

  26. R. Hull and J.C. Bean, J. Vac. Sci. Tech., A7 (1989), p. 2580.

    Google Scholar 

  27. E.P. Kvam, Phil. Mag. Lett., 62(3) (1990), p. 167.

    CAS  Google Scholar 

  28. E.P. Kvam et al, Defects in Electronic materials (Pittsburgh, PA: MRS, 1988), p. 623.

    Google Scholar 

  29. E.P. Kvam, D.M. Maher, and C.J. Humphreys,J. materials Research, 5(9) (1990), p. 1900.

    CAS  Google Scholar 

  30. E.P. Kvam, Proc. XII International Conf. on Electron Microscopy, vol. 4, ed. L.D. Peachey and D.B. Williams (San Francisco, CA: San Francisco Press, 1990), p. 560.

    Google Scholar 

  31. S.A. Dregia and J.P. Hirth, J. Appl. Phys., 69(4) (1991), p. 2169.

    CAS  Google Scholar 

  32. D.D. Perovich et al., Thin Solid Films, 183 (1989), p. 141.

    Google Scholar 

  33. D.J. Eaglesham et al., Phys. Rev. Lett., 62(2) (1989), p. 187.

    CAS  Google Scholar 

  34. D.J. Howard and D.C. Paine, Defect-Interface Interactions (Pittsburgh, PA: MRS, in press).

  35. C. Frigeri et al., in Ref. 34.

  36. N.D. Theodore et al., in Ref. 34.

  37. C.G. Tuppen et al, Appl. Phys. Lett., 56(2) (1990), p. 140.

    CAS  Google Scholar 

  38. J.R. Patel and A.R. Chaudhuri, Phys. Rev., 143 (1966), p. 601.

    CAS  Google Scholar 

  39. H. Al exander and P. Haasen, Solid State Physics, vol. 22 (New York: Academic Press, 1968).

    Google Scholar 

  40. M. Imai and K. Sumino, Phil. Mag. A, 47 (1983), p. 599.

    CAS  Google Scholar 

  41. H. Al exander, Dislocations in Solids, vol. 7, ed. F.R.N. Nabarro (New York: Elsevier, 1986), p. 13.

    Google Scholar 

  42. P.M.J. Maree et al., J. Appl. Phys., 62(11) (1987), p. 4413.

    CAS  Google Scholar 

  43. J.Y. Tsao and B.W. Dodson, Appl. Phys. Lett., 53 (1988), p. 848.

    CAS  Google Scholar 

  44. E.P. Kvam and R. Hull, J. Appl. Phys., 73(11) (1993), p. 7407.

    CAS  Google Scholar 

  45. R. Hull et al., Silicon Molecular Beam Epitaxy (Pittsburgh, PA: MRS, 1991), p. 153.

    Google Scholar 

  46. R. Hull et al., Inst. Phys. Conf. Ser. No. 117 (1991), p. 497.

    Google Scholar 

  47. D.M. Hwang et al, Phys. Rev. Lett., 66 (6) (1991), p. 739.

    Google Scholar 

  48. M. Al brecht et al., Structure & Properties of Interfaces in materials (Pittsburgh, PA: MRS, 1992), p. 79.

    Google Scholar 

  49. J.M. Bonar et al., Appl. Phys. Lett., 60 (1992), p. 1327.

    CAS  Google Scholar 

  50. M. Albrecht et al., Appl. Phys. Lett., 62(18) (1993), p. 22

    CAS  Google Scholar 

  51. R. People and J.C. Bean, Appl. Phys. Lett., 47 (1985), p. 322; 49 (1987), p. 229.

    Google Scholar 

  52. I.J. Fritz, Appl. Phys. Lett., 51 (1987), p. 1080.

    CAS  Google Scholar 

  53. I.J. Fritz et al., Appl. Phys. Lett, 46(10) (1985), p. 967.

    CAS  Google Scholar 

  54. D.C. Houghton et al., J. Appl. Phys., 67 (4) (1990), p. 1850.

    CAS  Google Scholar 

  55. D.C. Houghton et al., Thin Solid Films, 183 (1989), p. 171.

    CAS  Google Scholar 

  56. C.G. Tuppen and C.J. Gibbings, J. Appl. Phys., 64 (1990), p. 1526.

    Google Scholar 

  57. C.G. Tuppen, C.J. Gibbings, and M. Hockly, Appl. Phys. Lett., 54(2) (1989), p. 148.

    Google Scholar 

  58. R. Hull et al., Dislocations and Interfaces in Semiconductors, ed. K. Rajan, J. Narayan, and D. Ast (Warrendal e, PA: TMS, 1988), p. 77.

    Google Scholar 

  59. R. Hull et al., Appl. Phys. Lett., 52(19) (1988), p. 1605.

    CAS  Google Scholar 

  60. R. Hull et al., Thin Solid Films, 183 (1989), p. 117.

    CAS  Google Scholar 

  61. D.C. Houghton et al., J. Appl. Phys., 67(4) (1990), p. 1850.

    CAS  Google Scholar 

  62. R. Hull, J.C. Bean, and C. Buescher, J. Appl. Phys., 66(12) (1989), p. 5837.

    CAS  Google Scholar 

  63. R.J. Hauenstein et al., Thin Solid Films, 183 (1989), p. 79.

    CAS  Google Scholar 

  64. R. Hull et a., J. Appl. Phys., 70(4) (1991), p. 2052.

    Google Scholar 

  65. C.J. Gibbings, C.G. Tuppen, and V. Higgs, in Ref. 45, p. 205.

    Google Scholar 

  66. R. Hull et al., Appl. Phys. Lett., 59(13) (1991), p. 1585.

    CAS  Google Scholar 

  67. G. Abstreiter et al., Phys. Rev. Lett, 54 (1985), p. 2441.

    CAS  Google Scholar 

  68. E. Kasper et al., Layered Structures and Epitaxy (Pittsburgh, PA: MRS, 1986), p. 347.

    Google Scholar 

  69. G.P. Watson et al., Appl. Phys. Lett., 63(6) (1993), p. 746.

    CAS  Google Scholar 

  70. E.P. Kvam and F. Namavar, Appl. Phys. Lett., 58(21) (1991), p. 2357.

    CAS  Google Scholar 

  71. D.P. Mal ta et al., Appl. Phys. Lett, 60(7) (1992), p. 844.

    CAS  Google Scholar 

  72. C.G. Tuppen, C.J. Gibbings, and M. Hockly, in Ref. 45, p. 187.

    Google Scholar 

  73. E.A. Fitzgeral d et al., Appl. Phys. Lett., 59 (1991), p. 881.

    Google Scholar 

  74. C.J. Humphreys et al., J. de Phys. III, 1 (1991), p. 1119.

    Google Scholar 

  75. E.A. Fitzgeral d, JOM, 41(4) (1989), p. 20.

    Article  CAS  Google Scholar 

  76. T.I. Kamins et al., Appl. Phys. Lett., 61(6) (1992), p. 669.

    CAS  Google Scholar 

  77. S.L. Wright and H. Kroemer, Appl. Phys. Lett., 37 (1980), p. 210.

    Google Scholar 

  78. M. Yamaguchi et al., Appl. Phys. Lett., 53 (1989), p. 2293.

    Google Scholar 

  79. R. Hull et al., J. Appl. Phys., 65(12) (1989), p. 4723.

    CAS  Google Scholar 

  80. F. Ross et al., Appl. Phys. Lett., 62(12) (1993), p. 1426.

    Google Scholar 

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Authors and Affiliations

  1. Purdue University, USA

    Eric P. Kvam Ph.D. (assistant professor, member of TMS) & Srikanth B. Samavedam B.Tech. (graduate student)

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  1. Eric P. Kvam Ph.D.
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  2. Srikanth B. Samavedam B.Tech.
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Kvam, E.P., Samavedam, S.B. Dislocations in strained layers: The Ge-Si system. JOM 46, 47–51 (1994). https://doi.org/10.1007/BF03220651

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