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Ion-beam doping during molecular beam epitaxy

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Abstract

Compositional modifications on the atomic scale, made possible through molecular beam epitaxy, have opened up a new range of semiconductor devices. Some recent work has investigated the addition of ion dopants during molecular beam epitaxy, with the goal of improving electrical and optical properties.

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Authors and Affiliations

  1. Northwestern University, USA

    S. A. Barnett Ph.D. (assistant professor, member of TMS)

  2. University of Illinois, Urbana, USA

    J. E. Greene Ph.D. (professor)

  3. Linköping University, Sweden

    J. -E. Sundgren Ph.D. (docent)

Authors
  1. S. A. Barnett Ph.D.
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  2. J. E. Greene Ph.D.
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  3. J. -E. Sundgren Ph.D.
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Barnett, S.A., Greene, J.E. & Sundgren, J.E. Ion-beam doping during molecular beam epitaxy. JOM 41, 16–19 (1989). https://doi.org/10.1007/BF03220192

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