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Diffusion barriers between gold and semiconductors

Comparison of rf diode sputtered titanium-tungsten and dc magnetron sputtered tungsten barriers between gold and silicon

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Abstract

The effectiveness of a number of semiconductor devices depends on the efficiency with which interdiffusion between the semiconductor and metals, which must be applied to it either as contacts or conductive metallizations, can be blocked. Comparisons of the characteristics of the diffusion barriers which can be used between gold and semiconductors — such as those which are made here — therefore have considerable significance.

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Authors and Affiliations

  1. Exxon Enterprises, Sunnyvale, CA., USA

    Ronald S. Nowicki

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  1. Ronald S. Nowicki
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Nowicki, R.S. Diffusion barriers between gold and semiconductors. Gold Bull 15, 21–24 (1982). https://doi.org/10.1007/BF03216567

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  • DOI: https://doi.org/10.1007/BF03216567

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