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Gold in silicon: Characterisation and infra-red detector applications

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Abstract

Gold is used as a deep level impurity in silicon in semi-conductor devices. In this paper the characteristics of the gold impurity centre are reviewed, an almost complete characterisation having been achieved by the indirect observation of its charge states in space-charge regions. The application of gold-doped devices as infra-red detectors is also discussed.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of California at Davis, Davis, California, USA

    Leonard Forbes

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  1. Leonard Forbes
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Forbes, L. Gold in silicon: Characterisation and infra-red detector applications. Gold Bull 10, 49–53 (1977). https://doi.org/10.1007/BF03215429

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  • DOI: https://doi.org/10.1007/BF03215429

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