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Growth and applications of HVPE-GaN nanorods

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Abstract

We demonstrate the properties of gallium nitride nanorods by hydride vapor phase epitaxy (HVPE). Single crystalline gallium nitride nanorods are formed on a sapphire substrate by HVPE. Single crystalline p-type and n-type gallium nitride nanorods have been grown and characterized by electrical transport measurements. HVPE was used to controllably introduce either magnesium or silicon dopants during the growth of the gallium nitride nanorods. The electron emission properties of gallium nitride nanorod array electron emitters were comparable with (or displayed even lower turn-on voltage than) those of carbon nanotubes. Wide-bandgap current rectifiers with high breakdown voltage (over −10 V) and near-ultraviolet p-n junction LEDs with emission wavelength of 390 nm, based on the single-rod gallium nitride p-n junction array, were obtained.

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Authors and Affiliations

  1. Quantum-functional Semiconductor Research Center, Dongguk University, 26 Pil-dong 3-ga, Jung-gu, 100715, Seoul, Korea

    Tae Won Kang & Hwa-Mok Kim

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  1. Tae Won Kang
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  2. Hwa-Mok Kim
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Correspondence to Hwa-Mok Kim.

Additional information

This article is based on a presentation in “The 7th Korea-China Workshop on Advanced Materials” organized by the Korea-China Advanced Materials Cooperation Center and the China-Korea Advanced Materials Cooperation Center, held at Ramada Plaza Jeju Hotel, Jeju Island, Korea on August 24–27, 2003.

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Kang, T.W., Kim, HM. Growth and applications of HVPE-GaN nanorods. Met. Mater. Int. 10, 367–373 (2004). https://doi.org/10.1007/BF03185987

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